Designed for wideband defense and commercial radar, communications and avionics
Richardson RFPD Inc. announced the availability and full design support capabilities for two GaN on SiC RF transistors from Qorvo.
The discrete GaN on SiC HEMTs operate from DC to 4 GHz. The QPD1009 is a 15 W, 50 V device with an output power level of 17 W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10 W, 50 V QPD1010 features an output power of 11 W at 2 GHz and a linear gain of 24.7 dB at 2 GHz.
The QPD1009 and QPD1010 are Qorvo's newest additions to its growing GaN family of devices that are tailored for wideband defense and commercial radar, communications and avionics applications. The new transistors offer significant operational and system cost savings by achieving greater system-level efficiency and are available in low-cost 3 mm x 3 mm plastic QFN packages.
Additional key features include:
- Typical PAE3dB:
- QPD1009: 72% at 2 GHz
- QPD1010: 70% at 2 GHz
- CW and pulse capable
- Evaluation boards available: