New additions to family of cost-effective radar and communications system solutions
Richardson RFPD Inc. announced the availability and full design support capabilities for two new GaN transistors from Qorvo.
The 5W TGF3020-SM and 30 W TGF3021-SM input-matched transistors enable high linear gain and power efficiency in low-cost, space-saving surface-mount plastic QFN packages. The integrated input matching network enables wideband gain and power performance, and the output can be matched on-board to optimize power and efficiency for any region within the band.
The new transistors are part of Qorvo’s family of cost-effective radar and communications system solutions. Key features include:
|
Part Number |
Frequency Range |
Output Power |
PAE |
Linear Gain (dB) |
Packaging (mm) |
|
4.0-6.0 |
6.8W @ 5 GHz |
59 |
12.7 @ 5 GHz |
3x3 plastic QFN |
|
|
0.03 -4.0 |
36.0W @ 2 GHz |
72 |
19.3 @ 2 GHz |
3x4 plastic QFN |
“The plastic packaging means greater power efficiency,” commented Mark Vitellaro, Director of Strategic Marketing, Richardson RFPD. “And the ability to optimize power and efficiency within the band enables flexible, scalable GaN solutions with simplified board designs.”
Evaluation boards are available as follows:
- TGF3020-SM-EB (4000–6000 MHz)
- TGF3020-SM-EB1 (5300–5900 MHz)
- TGF3021-SM-EVAL
To find more information or to purchase these products today online, please visit the TGF3020-SM and TGF3021-SM webpages. The devices are also available by calling 1-800-737-6937.
