Cree, Inc. has made seven new GaN HEMT die available through distribution via Mouser. Manufactured on silicon carbide (SiC) substrates using a either 0.4 or 0.25 μm gate length fabrication process, the gallium nitride (GaN) high electron mobility transistor (HEMT) die exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency.
MACOM announced an IP licensing program for Gallium Nitride (GaN) on silicon technology. MACOM detailed recent progress in two areas critical to realizing its future vision of enabling the mainstream adoption of GaN as a large-scale RF semiconductor technology across the industry.
Sonnet Software Inc. introduces Blink™, the first multi-solver passive device modeling suite, now available for purchase. Blink operates entirely from within the Cadence® Virtuoso® environment and is used for the analysis of on-chip passive devices such as spiral inductors and MIM capacitors.