Articles Tagged with ''silicon''

MACOM extends industry leading diode position with family of HMIC PIN diode switches

MACOM Technology Solutions Inc., a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products, today announced the SPDT MASW-002103-1363, SP3T MASW-003103-1364, and the SP4T MASW-004103-1365, a family of HMIC™ (Heterolithic Microwave Integrated Circuit) silicon PIN diode switches in conjunction with the MABT-011000-1423, a fully monolithic broadband surface mount bias network.


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MACOM announces fourth generation GaN technology

Next-generation GaN on Silicon technology rivals performance of GaN on Silicon Carbide, offering greater than 70% efficiency and 19dB Gain at a cost structure below incumbent LDMOS technology

M/A-COM Technology Solutions Holdings, Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products, announced its fourth generation of Gallium Nitride on Silicon (GaN on Si) technology.


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MACOM to demonstrate cutting-edge Gen 4 GaN portfolio at IMS2015

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, will showcase the industry’s broadest and most advanced Gallium Nitride (GaN) RF product portfolio at IMS2015 in Phoenix, Ariz., May 19-21. MACOM’s booth will feature new, revolutionary Gen 4 GaN on Silicon product solutions optimized for commercial, industrial, scientific and medical applications.


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Infineon and Panasonic to jointly develop GaN power devices

Infineon Technologies AG and Panasonic Corp. have announced an agreement under which both companies will jointly develop Gallium nitride (GaN) devices based on Panasonic’s normally-off (enhancement mode) GaN on silicon transistor structure integrated into Infineon’s surface-mounted device (SMD) packages. In this context Panasonic has provided Infineon with a license of its normally-off GaN transistor structure. This agreement will enable each company to manufacture high performing GaN devices. Customers will have the added advantage of having two possible sources for compatible packaged GaN power switches: a setup not available for any other GaN on silicon device so far.


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New Cree GaN HEMT die available via distribution

 Cree, Inc. has made seven new GaN HEMT die available through distribution via Mouser. Manufactured on silicon carbide (SiC) substrates using a either 0.4 or 0.25 μm gate length fabrication process, the gallium nitride (GaN) high electron mobility transistor (HEMT) die exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency. 


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