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Articles by Richardson RFPD Inc.

Four SiC MOSFET-based Power Modules

Vincotech_SiC Mosfet_PR_PhotoRichardson RFPD Inc. announced the availability from stock and full design support capabilities for four 1200 V SiC MOSFET-based power modules from Vincotech. The modules are available in two versions. The first is a flow3xPHASE 0 SiC three-phase inverter module with 3x BUCK/BOOST and split output topology. The second version is the flow3xBOOST 0 SiC with three-channel boost circuits.


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RF Switch: MASW-011055

MACOM_MASW-011055_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new RF switch from M/A-COM Technology Solutions. The MASW-011055 is a high power PIN diode SP2T switch in a common anode configuration, operating from 30 MHz to 3 GHz. It features low insertion loss and excellent linearity and is capable of handling 100 W CW incident power at a base plate temperature of 85ºC.


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Low Passive Mixer: MAMX-011021

MACOM_MAMX-011021_PR_PhotoRichardson RFPD Inc. announced today the availability and full design support capabilities for a new low passive mixer from M/A-COM Technology Solutions. The RF, LO and IF frequency ranges are 5 to 35 GHz, 3 to 33 GHz and DC to 4.5 GHz, respectively. The new mixer can be used for lower sideband (LSB) or upper sideband (USB) mixing, and two mixers can be combined in a quadrature configuration for optimal image rejection.


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4 W Ka-Band Power Amplifier: MAAP-011139-DIE

MAAP-011139-DIERichardson RFPD Inc. announced the availability and full design support capabilities for a new 4 W power amplifier from M/A-COM Technology Solutions. The MAAP-011139-DIE is a four-stage, 4 W power amplifier that operates from 29 to 31 GHz and provides 24 dB of linear gain (at 30 GHz), 4 W saturated output power, and 23% efficiency while biased at 6 V. It is fabricated using a GaAs pHEMT process that features full passivation for enhanced reliability.


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Four GaN Power Amplifiers

TriQuint_S_Band_PR_PhotoIdeally suited for commercial and military S-band radar applications Richardson RFPD Inc. announces full design support capabilities and immediate availability of four new gallium nitride on silicon carbide (GaN on SiC) power amplifiers (PAs) from TriQuint. The new S-band amplifiers are fabricated on TriQuint’s production 0.25 μm GaN on SiC process (TQGaN25).


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