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Articles by Richardson RFPD Inc.

Broadband Low Noise Amplifier

Skyworks_SKY67159-396LF_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a broadband LNA from Skyworks Solutions Inc. The SKY67159-396LF single-stage, GaAs pHEMT LNA operates from 200 to 3800 MHz and features superior gain flatness and exceptional linearity in a compact 2 mm x 2 mm, 8-pin, dual flat no-lead package. It is designed for FDD and TDD 2G/3G/4G LTE small-cell base stations, as well as LMR, Milcom and M2M applications.


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GaAs MMIC Low-Noise, Wideband Amplifier: HMC753LP4E

ADI_HMC753LP4E_PRPhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a GaAs MMIC low-noise, wideband amplifier from Analog Devices Inc. The HMC753LP4E operates between 1 and 11 GHz, providing up to 16.5 dB of small signal gain, 1.5 dB noise figure, and output IP3 of +30 dBm, while requiring only 55 mA from a +5 V supply. The P1dB output power of up to +18 dBm enables the LNA to function as an LO driver for balanced, I/Q or image reject mixers.


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Three Discrete Power GaN on SiC HEMTs

Three New Discrete Power GaNRichardson RFPD Inc. announced the availability and full design support capabilities for three discrete power GaN on SiC HEMTs from Qorvo. The TGF2952, TGF2953 and TGF2954 are designed using Qorvo’s proven TQGaN25 production process that features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The HEMTs feature maximum power added efficiency levels that make them appropriate for high efficiency applications.


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Dual-Channel SiC MOSFET Driver: CGD15HB62P1

Wolfspeed_CGD15HB62P1_PR_PhotoRichardson RFPD Inc. announced the availability a new dual-channel SiC MOSFET driver from Wolfspeed, a Cree Company. The CGD15HB62P1 features two output channels, an integrated isolated power supply, direct-mount low induction design, short circuit protection and under-voltage protection. It is a gate driver for use in industrial applications for two of Wolfspeed’s 1200 V SiC MOSFET power modules, the 300 A CAS300M12BM2 and the 120 A CAS120M12BM2.


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High Power Handling SPDT Switch: PE42822

Peregrine_PE42822A-Z_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new 700 to 3800 MHz, UltraCMOS® SPDT RF switch from Peregrine Semiconductor Corporation. The PE42822 is a HaRP™ technology-enhanced absorptive 50Ω SPDT RF protection switch designed for use in high-power and high-performance wireless infrastructure and small cell applications, supporting frequencies up to 3800 MHz.


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2 W GaN Driver Amplifier: TGA2958-SM

Quorvo_TGA2958-SM_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a 2 W GaN driver amplifier from Qorvo. The TGA2958-SM is a packaged Ku-band amplifier fabricated on Qorvo’s 0.15 um GaN on SiC production process (QGaN15). Operating over a 13 to18 GHz bandwidth, the TGA2598-SM delivers 2 W of saturated output power with 20 dB large signal gain and > 25% power added efficiency.


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1700 V SiC MOSFET: C2M1000170J

Wolfspeed_ C2M1000170_PR_PhotoRichardson RFPD Inc. announced the availability for a 1700 V SiC MOSFET. The C2M1000170J features high blocking voltage with low RDS (on), low parasitic inductance, ultra-low drain gate capacitance, and a separate driver source pin. It is easy to parallel and simple to drive. The new MOSFET offers higher system efficiency, smooth switching waveforms, reduced cooling requirements, and increased system reliability.


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6 W Ka-Band Power Amplifier: MAAP-011140-DIE

MAAP-011140-DIERichardson RFPD Inc. announced the availability and full design support capabilities for a power amplifier from M/A-COM Technology Solutions. The MAAP-011140-DIE is a 4-stage, 6 W power amplifier in bare die form that is fabricated using a GaAs pHEMT device process featuring full passivation for enhanced reliability. The power amplifier operates from 27.5 to 30.0 GHz and provides 24 dB of linear gain, 6 W saturated output power, and 23% power added efficiency.


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Dual Differential SPDT Switch: PE42920

Peregrine_PE42920_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new dual differential, single pole double throw RF switch. The PE42920 DDSPDT RF switch is a broadband (10 kHz to 6 GHz) and low loss device that enables the switching of two independent differential signals. This device consumes less power than active differential switches. It has high isolation between same-channel inputs, as well as opposite active channels.


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75 Ω pHEMT Dual RF Amplifier: TAT7472A1F

Qorvo_TAT7472A1F_PR_PhotoThe TAT7472A1F is a 75 Ω RF amplifier designed for CATV use but capable of operation up to 1218 MHz, making it suitable for DOCSIS 3.1. It contains two separate amplifiers for push-pull applications and is fabricated using 6-inch GaAs pHEMT technology. Each amplifier contains on-chip active biasing, with bias current set points that are adjustable with a single resistor from the input to ground. Typical supply voltage for the TAT7472A1F is +5 V.


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