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Articles by Richardson RFPD Inc.

Two Ka-band Power Amplifiers: MAAP-011139 / MAAP-011246

MACOM_MAAP-011139_MAAP-011246_PR_Photo (2)Richardson RFPD Inc. announced the availability and full design support capabilities for two Ka-band power amplifiers from M/A-COM Technology Solutions.The MAAP-011139 is a 4-stage, 4 W power amplifier that operates from 28.5 to 31 GHz and provides 22 dB of linear gain. The MAAP-011246 is a 4-stage, 2 W power amplifier that operates from 27.5 to 31.5 GHz and provides 23 dB of linear gain.


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2.4 GHz WLAN/BT LTE Coexistence Filter: 885128

Qorvo_885128_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a 2.4 GHz WLAN/BT LTE coexistence filter from Qorvo. The 885128 is a high-performance, high-power bulk acoustic wave (BAW) band-pass filter with extremely steep skirts. It simultaneously exhibits low loss in the WiFi band and high near-in rejection in the approximate LTE bands. The new BAW filter is specifically designed to enable coexistence of WiFi and LTE signals.


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Ultra-Low-Noise, Flat Gain LNA: TQL9092

Qorvo_TQL9092_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new ultra-low-noise, flat gain LNA from Qorvo. The TQL9092 provides a gain flatness of 2 dB (peak-to-peak) over a wide bandwidth—from 1.5 to 3.6 GHz. At 2.6 GHz, the amplifier typically provides 22.6 dB gain, +37 dBm OIP3 at a 65 mA bias setting, and 0.6 dB noise figure. The LNA can be biased from a single positive supply ranging from 3.3 to 5 volts. It is offered in a 2 mm x 2 mm surface-mount package.


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High-Power Circuit Limiters: TGL2210-SM / TGL2927-SM

Qorvo_TGL2210-SM_TGL2927-SM_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for two high-power receive protection circuit limiters from Qorvo. Using Qorvo’s passive GaAs VPIN technology, the new devices do not require bias and are offered in small plastic overmold packages. This simplifies system integration while maximizing performance and protection. The limiters are ideal for commercial and military radar applications, communications systems and electronic warfare.


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Wi-Fi-integrated PA Modules: RFPA5522 / RFPA5542

Qorvo_RFPA5522_RFPA5542_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for two Wi-Fi-integrated PA modules from Qorvo. The RFPA5522 and RFPA5542 are three-stage power amplifiers designed for 802.11a/n/ac applications. The integrated input and output 50Ω match greatly reduces the layout area, bill of materials and manufacturability cost in the customer application. The devices are manufactured on an advanced InGaP heterojunction bipolar transistor (HBT) process.


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Broadband Low Noise Amplifier

Skyworks_SKY67159-396LF_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a broadband LNA from Skyworks Solutions Inc. The SKY67159-396LF single-stage, GaAs pHEMT LNA operates from 200 to 3800 MHz and features superior gain flatness and exceptional linearity in a compact 2 mm x 2 mm, 8-pin, dual flat no-lead package. It is designed for FDD and TDD 2G/3G/4G LTE small-cell base stations, as well as LMR, Milcom and M2M applications.


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GaAs MMIC Low-Noise, Wideband Amplifier: HMC753LP4E

ADI_HMC753LP4E_PRPhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a GaAs MMIC low-noise, wideband amplifier from Analog Devices Inc. The HMC753LP4E operates between 1 and 11 GHz, providing up to 16.5 dB of small signal gain, 1.5 dB noise figure, and output IP3 of +30 dBm, while requiring only 55 mA from a +5 V supply. The P1dB output power of up to +18 dBm enables the LNA to function as an LO driver for balanced, I/Q or image reject mixers.


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Three Discrete Power GaN on SiC HEMTs

Three New Discrete Power GaNRichardson RFPD Inc. announced the availability and full design support capabilities for three discrete power GaN on SiC HEMTs from Qorvo. The TGF2952, TGF2953 and TGF2954 are designed using Qorvo’s proven TQGaN25 production process that features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The HEMTs feature maximum power added efficiency levels that make them appropriate for high efficiency applications.


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Dual-Channel SiC MOSFET Driver: CGD15HB62P1

Wolfspeed_CGD15HB62P1_PR_PhotoRichardson RFPD Inc. announced the availability a new dual-channel SiC MOSFET driver from Wolfspeed, a Cree Company. The CGD15HB62P1 features two output channels, an integrated isolated power supply, direct-mount low induction design, short circuit protection and under-voltage protection. It is a gate driver for use in industrial applications for two of Wolfspeed’s 1200 V SiC MOSFET power modules, the 300 A CAS300M12BM2 and the 120 A CAS120M12BM2.


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High Power Handling SPDT Switch: PE42822

Peregrine_PE42822A-Z_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new 700 to 3800 MHz, UltraCMOS® SPDT RF switch from Peregrine Semiconductor Corporation. The PE42822 is a HaRP™ technology-enhanced absorptive 50Ω SPDT RF protection switch designed for use in high-power and high-performance wireless infrastructure and small cell applications, supporting frequencies up to 3800 MHz.


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