advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement

Articles by Richardson RFPD Inc.

RF SPDT Switch: PE423422

Peregrine_PE423422_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new RF single-pole double-throw (SPDT) switch from Peregrine Semiconductor Corporation. The PE423422 delivers excellent linearity and harmonics performance. It is designed to cover a wide range of automotive wireless applications from 100 to 6000 MHz, including automotive infotainment and traffic safety applications.


Read More

GaN RF Transistor: TGF3021-SM

Quorvo_TGF3021-SM_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new discrete GaN on SiC HEMT from TriQuint / Qorvo. The 30 W (P3 dB) TGF3021-SM operates from 0.03 to 4.0 GHz and is constructed with TriQuint’s TQGaN25 production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.


Read More

RF LDMOS Wideband Integrated Power Amplifier: AFIC10275N

Freescale_ AFIC10275N _PR_Photo_NLRichardson RFPD Inc. announced the availability and full design support capabilities for a new LDMOS integrated power amplifier from Freescale. The AFIC10275N is the industry’s first RF power integrated circuitcovering the 978-1090 MHz band. It integrates two amplification stages in a plastic package, delivering 250 W with 31 dB of gain and 64% drain efficiency. The device also embeds temperature and RF sensing capabilities, reducing the need for external components.


Read More

UltraCMOS® SPDT RF Ka-Band Flip-Chip Switch: PE42524

Peregrinet_PE42524_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new UltraCMOS switch from Peregrine Semiconductor Corporation. The PE42524 is a HaRP™ technology-enhanced reflective wideband SPDT RF switch die that operates from 10 MHz to 40 GHz and delivers high isolation performance, excellent linearity and low insertion loss. At 30 GHz, the PE42524 exhibits 17 dB active port return loss, 47 dB isolation and 2.2 dB insertion loss.


Read More

RF Input-Matched Transistor: TGF3015-SM

TriQuint_Quorvo_TGF3015-SM_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new discrete GaN on SiC HEMT from TriQuint / Qorvo. The 10 W (P3dB), 50 Ω input-matched TGF3015-SM operates from 0.03 to 3 GHz. The integrated input-matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3 mm x 3 mm package.


Read More

LDMOS, GaAs and GaN on SiC devices

Freescale_Military_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for range of RF solutions for aerospace and defense applications from Freescale Semiconductor, Inc. The portfolio encompasses a range of high-power solutions that support a wide range of needs for military applications, including avionics, HF through L- and S-band radar, communications, missile guidance, electronic warfare, and identification, friend or foe (IFF).


Read More

Temperature-Variable Chip Attenuators: TCAF N05 Series

Aeroflex_Inmet_Chip_attn_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a series of temperature-variable chip attenuators from Aeroflex/Inmet. The Powerfilm™ TCAF N05 Series operates from DC to 12 GHz and is designed to vary -.005 dB/dB/ºC to compensate for temperature-induced system gain variation without requiring a bias or control voltage. These attenuators consist of laser-trimmed thick film resistor elements on an alumina ceramic substrate with a protective paint layer.


Read More

Pulsed Power HEMT: The MAGX-000912-650L0x

MACOM_MAGX-000912_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new GaN on SiC 960 to 1215 MHz pulsed power HEMT from M/A-COM Technology Solutions. Using state-of-the-art wafer fabrication processes, this high performance transistor provides high gain, efficiency, bandwidth and ruggedness over a wide bandwidth. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions.


Read More

Active Antenna: M1227HCT-A2-SMA

Maxtena_M1227HCT_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new active rugged antenna from Maxtena, Inc. The M1227HCT-A2-SMA is designed for L1/L2 GPS and GLONASS bands, and specifically for applications requiring greater accuracy than L1 antennas can provide. The M1227HCT-A2-SMA features a screw-on design, with an integrated SMA connector. It offers superior filter­ing performance and is rated for 50 V/m out-of-band interference.


Read More

GaAs Power Amplifier: MAAP-011022

MACOM_MAAP-011022_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new GaAs power amplifier from M/A-COM Technology Solutions. The MAAP-011022 high power balanced amplifier operates from 2.7 to 3.0 GHz, provides 7 W of pulsed power, and is designed to operate at an 8% duty cycle. The new amplifier provides rugged performance under load mismatch, and its balanced architecture offers excellent return loss.


Read More

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement