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Articles by Richardson RFPD Inc.

fastPack 0 SiC Power Module: 10-PC094PB065ME01-L637F06Y

Vincotech_PC094PB065ME01_PR_PhotoRichardson RFPD Inc. announced the availability from stock and full design support capabilities for a fastPack 0 SiC power module from Vincotech. The 10-PC094PB065ME01-L637F06Y is a faster, cooler and more efficient power module designed for switching frequencies up to 400 kHz. It features a fast-switching 900 V SiC MOSFET that outperforms 1200 V SiC MOSFETs (+8% efficiency at a light load and +3% at full load) and provides a higher safety margin than 650 V MOSFETs.


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Half-Bridge SiC Power Module: CAS325M12HM2

Wolfspeed_CAS325M12HM2_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a half-bridge SiC power module from Wolfspeed, a Cree Company. The CAS325M12HM2 power module is configured in a half-bridge topology comprised of seven 1.2 kV 25 mΩ C2M SiC MOSFETs and six 1.2 kV 50 A Z-Rec Schottky diodes per switch position. CAS325M12HM2 features ultra-low loss and low (5 nH) inductance, ultra-fast switching operation, zero reverse recovery current from the diode, and more.


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UltraCMOS® SPDT RF Switch: PE42723

Peregrine_PE42723 _PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a UltraCMOS® SPDT RF switch from Peregrine Semiconductor Corporation. The PE42723 is a HaRP™ technology-enhanced reflective SPDT RF switch designed for use in cable applications, including DOCSIS 3.0/1 cable modem, set-top box and residential gateway. It delivers high linearity and excellent harmonics performance in the 5 to 1794 MHz band, as well as low insertion loss and high isolation performance.


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UltraCMOS® Digital Step Attenuator: PE4314

Peregrine_PE4314_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new UltraCMOS® digital step attenuator (DSA) from Peregrine Semiconductor Corporation. The PE4314 is a 75Ω HaRP™ technology-enhanced, 6-bit RF DSA that operates from 1 MHz to 2.5 GHz and features glitch-less attenuation state transitions and low distortion. It supports 1.8 V control voltage and an extended operating temperature range up to +105° C.


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High-Linearity Quad MOSFET Mixer: PE4152

Peregrine_PE4152z_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new UltraCMOS® quad MOSFET mixer from Peregrine Semiconductor Corporation. The PE4152 is a high-linearity quad MOSFET mixer with an integrated local oscillator (LO) buffer amplifier. The LO amplifier allows for LO input drive levels of less than 0 dBm to produce third-order intercept point (IIP3) values similar to a quad MOSFET array driven with a +15 dBm LO drive.


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Continuous Wave SPDT Reflective Switch: MPS2R10-606

Microsemi_MPS2R10-606_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a 100 W continuous wave SPDT reflective switch from Microsemi Corporation. The MPS2R10-606 SPDT series-shunt PIN diode switch operates from 50 to 1000 MHz, with 500 ns switching speed. At 100 MHz, it typically offers 60 dB isolation, with 0.1 dB insertion loss and 28 dB return loss. At 500 MHz, it typically offers 55 dB isolation, 0.2 dB insertion loss, and 15 dB return loss.


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Hyperabrupt Varactor Diode: MAVR-011020-1411

MAVR-011020-1411Richardson RFPD Inc. announced the availability and full design support capabilities for a new gallium arsenide flip-chip hyperabrupt varactor diode from M/A-COM Technology Solutions. The high-frequency MAVR-011020-1411 offers 0.025 pF total capacitance at 1 MHz/15V, a Q factor of 3000, and constant gamma for linear tuning. The device is suitable for point-to-point, electronic scanning antenna arrays, electronic warfare (EW), and other Aerospace & Defense applications.


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Balanced 3-Stage GaAs Amplifier: MAAP-011199

MAAP-011199Richardson RFPD Inc. announced the availability and full design support capabilities for a new power amplifier from M/A-COM Technology Solutions. The MAAP-011199 is a balanced 3-stage gallium arsenide (GaAs) pHEMT MMIC power amplifier that operates from 80 to 100 GHz and typically provides +24 dBm of saturated output power. The power amplifier’s balanced architecture results in excellent input and output match to 50Ω across the entire 80 to 100 GHz frequency band.


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Two X-band GaN Power Amplifiers: TGA2622-SM and TGA2624-SM

Qorvo_TGA2622-SM_TGA2624-SM_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for two X-band GaN power amplifiers from Qorvo. The TGA2622-SM and TGA2624-SM operate from 9 to 10 GHz and are offered in 7 mm x 7 mm air-cavity, laminate-based QFN packages. For both devices, the RF ports are internally DC blocked and matched to 50 ohms, enabling simple system integration.


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Selection Availability of Devices for RF Energy Applications

Anaren_Bridges_the_gap_PR_PhotoRichardson RFPD Inc. announced the availability of a selection of Anaren devices for RF energy applications. RF energy refers to the emerging technology that uses an all solid-state semiconductor chain to generate RF power for heating and processing. Magnetron tubes are the primary technology employed for these applications. The benefits of solid-state RF energy over magnetron tubes include a lower-voltage drive, smaller form factor, and greatly-enhanced reliability.


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