Richardson RFPD Inc. announced the availability and design support capabilities for an UltraCMOS® FET driver from Peregrine Semiconductor Corporation. The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as GaN Systems’ E-HEMT gallium nitride FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz.
Richardson RFPD, Inc. announced the availability and support capabilities for four GaN on SiC high-electron-mobility transistors from Qorvo. The QPD1000 is a 15 W (P3dB), 50 Ω-input matched discrete GaN on SiC HEMT, the QPD1003 is a 500 W (P3dB) internally-matched discrete GaN on SiC HEMT and the 125 W (P3dB) QPD1008L and 65 W (P3dB) QPD1015L are wideband unmatched discrete GaN on SiC HEMTs.
Richardson RFPD Inc. announced the availability for an ultra capacitor cell from Maxwell Technologies. The BCAP3000P300K04 is Maxwell’s first 3-volt cell and an addition to the K2 family of products. The 3 V cell provides higher energy density in the same industry standard 60 mm cylindrical design and an electrostatic storage capability that can cycle a million charges and discharges without performance degradation.
Richardson RFPD Inc. announced the availability and full design support capabilities for a 20 W SPDT switch from MACOM Technology Solutions Inc. The MASW-011071 is a terminated silicon PIN diode SPDT switch designed for X-band high-power, high-performance applications. The switch is assembled in a lead-free 7 mm, 44-lead PQFN plastic package and handles greater than 20 W of continuous wave (CW) power.
Richardson RFPD Inc. announced the availability and full design support capabilities for two monolithic phase and amplitude controllers. The PE46130 and PE46140 are Peregrine's additions to its MPAC product family and offer maximum phase-tuning flexibility for Doherty PA optimization. These monolithic RFICs integrate a 90° RF splitter, digital phase shifters and a digital step attenuator along with a low-voltage CMOS serial interface. They cover a phase range of 87.2° in 2.8° steps.
Richardson RFPD Inc. announced the availability and full design support capabilities for a new LDMOS transistor from NXP Semiconductors. The MRF1K50H builds on the success of NXP's 1250 W MRFE6VP61K25H, delivering 1500 W CW at 50 V, along with superior ruggedness and thermal performance. The MRF1K50H can reduce the number of transistors in high-power RF amplifiers- decreasing amplifier size and BOM.
Richardson RFPD Inc. announced the availability and full design support capabilities for a power limiter from MACOM Technology Solutions Inc. The MADL-011012 is a lead-free surface mount, high-power limiter, with an operating frequency range from 0.3 GHz to 1.0 GHz. It integrates the equivalent of 20 PIN, Schottky, limiter diodes, capacitors, inductors and resistors in a compact ceramic package.
Richardson RFPD Inc. announced the availability and full design support capabilities for a silicon carbide power MOSFET from Wolfspeed, a Cree Company. According to Wolfspeed, the C2M0045170D is the industry’s first 1700 V, 45 mΩ SiC MOSFET. It offers high-speed switching with low capacitances, avalanche ruggedness, fast intrinsic diode with low reverse recovery (Qrr), and it is easy to parallel and simple to drive.
Richardson RFPD Inc. announced the availability and full design support capabilities for a passive switch from MACOM Technology Solutions Inc. The MADP-011048 uses silicon PIN diodes in a non-magnetic surface mount package. There are two sets of diode pairs, constructed in an electrically-isolated, anti-parallel configuration, that operate from 5 to 400 MHz. MADP-011048 is well suited for MRI passive switching applications.