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Articles by Richardson RFPD Inc.
Richardson RFPD Inc. announces that it is accepting orders for two new solutions for simplifying next generation Doherty architecture.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for two new gallium nitride on silicon carbide (GaN on SiC) low noise amplifiers (LNA) from TriQuint.
Richardson RFPD Inc. announces its attendance and participation at EDI CON 2014, including its sponsorships of the GaN Panel and Small Cell Workshop.
Richardson RFPD Inc. announces a new 2500 to 6000 MHz, 100 W solid state high power amplifier from Empower RF Systems Inc. (Empower).
Richardson RFPD Inc. announced its sponsorship of a small cell workshop at the 2014 Electronic Design Innovation Conference (EDI CON).
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a select group of new low-cost products for wireless infrastructure and Aerospace & Defense applications from Skyworks Solutions, Inc. Devices include LNAs with ultra-low noise figures of 0.23 dB, as well as PAs offering 2 W P1 dB and +25 dBm linear Pout, and switches handling up to 150 W input power.
Richardson RFPD introduces addition to family of high frequency, high power, 7-bit digital step attenuators from Peregrine
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new high frequency, high power, 7-bit digital step attenuator (DSA) from Peregrine Semiconductor Corp. (Peregrine).
Richardson RFPD Inc. announced the launch of a new website resource focused exclusively on lab bench test components.
Richardson RFPD Inc. announces that it is accepting orders for five new discrete GaN transistors from TriQuint. The new discrete gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistors (HEMTs) offer a range of pulsed output power covering 10 to 285 W, with operating ranges from DC to 6 GHz.