Articles by Richardson RFPD Inc.

Two Monolithic Phase - Amplitude Controllers: PE46130 & PE46140

Peregrine_PE46130_PE46140_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for two monolithic phase and amplitude controllers. The PE46130 and PE46140 are Peregrine's additions to its MPAC product family and offer maximum phase-tuning flexibility for Doherty PA optimization. These monolithic RFICs integrate a 90° RF splitter, digital phase shifters and a digital step attenuator along with a low-voltage CMOS serial interface. They cover a phase range of 87.2° in 2.8° steps.

 


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LDMOS Power Transistor: MRF1K50H

NXP_MRF1K50H_PR_Photo_NLRichardson RFPD Inc. announced the availability and full design support capabilities for a new LDMOS transistor from NXP Semiconductors. The MRF1K50H builds on the success of NXP's 1250 W MRFE6VP61K25H, delivering 1500 W CW at 50 V, along with superior ruggedness and thermal performance. The MRF1K50H can reduce the number of transistors in high-power RF amplifiers- decreasing amplifier size and BOM.


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360 W CW Power Limiter: MADL-011012

MACOM_MADL-011012_PR_Photo_NLRichardson RFPD Inc. announced the availability and full design support capabilities for a power limiter from MACOM Technology Solutions Inc. The MADL-011012 is a lead-free surface mount, high-power limiter, with an operating frequency range from 0.3 GHz to 1.0 GHz. It integrates the equivalent of 20 PIN, Schottky, limiter diodes, capacitors, inductors and resistors in a compact ceramic package.


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Silicon Carbide Power MOSFET: C2M0045170D

Wolfspeed_C2M0045170D_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a silicon carbide power MOSFET from Wolfspeed, a Cree Company. According to Wolfspeed, the C2M0045170D is the industry’s first 1700 V, 45 mΩ SiC MOSFET. It offers high-speed switching with low capacitances, avalanche ruggedness, fast intrinsic diode with low reverse recovery (Qrr), and it is easy to parallel and simple to drive.


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Passive Switch for MRI Applications: MADP-011048

MACOM_MADP-011048_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a passive switch from MACOM Technology Solutions Inc. The MADP-011048 uses silicon PIN diodes in a non-magnetic surface mount package. There are two sets of diode pairs, constructed in an electrically-isolated, anti-parallel configuration, that operate from 5 to 400 MHz. MADP-011048 is well suited for MRI passive switching applications.


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Two 4 W Power Amplifiers: MAAP-011161 and MAAP-011193

MACOM_MAAP-011161_and_93_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for two 4 W power amplifiers from MACOM Technology Solutions Inc. The MAAP-011161 and MAAP-011193 are packaged linear PAs that operate from 7.1 to 7.9 GHz and 7.7 to 8.5 GHz, respectively. The devices offer OIP3 of +46.5 dBm and greater than +35.5 dBm Psat. The MAAP-011161 offers 22 dB small signal gain, while the MAAP-011193 provides 20 dB small signal gain.


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Two Series of DC/DC Converters: RKZ-xx2005D and RxxP22005D

RECOM_DC_toDC_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for two series of DC/DC converters from RECOM Power Inc. (RECOM). The RKZ-xx2005D and RxxP22005D series are especially designed for SiC MOSFET driver applications with harsh environmental requirements. The DC/DC converters are available with input voltages of 5, 12, 15 or 24VDC, with two asymmetric outputs of +20 VDC and -5 VDC.


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fastPack 0 SiC Power Module: 10-PC094PB065ME01-L637F06Y

Vincotech_PC094PB065ME01_PR_PhotoRichardson RFPD Inc. announced the availability from stock and full design support capabilities for a fastPack 0 SiC power module from Vincotech. The 10-PC094PB065ME01-L637F06Y is a faster, cooler and more efficient power module designed for switching frequencies up to 400 kHz. It features a fast-switching 900 V SiC MOSFET that outperforms 1200 V SiC MOSFETs (+8% efficiency at a light load and +3% at full load) and provides a higher safety margin than 650 V MOSFETs.


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Half-Bridge SiC Power Module: CAS325M12HM2

Wolfspeed_CAS325M12HM2_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a half-bridge SiC power module from Wolfspeed, a Cree Company. The CAS325M12HM2 power module is configured in a half-bridge topology comprised of seven 1.2 kV 25 mΩ C2M SiC MOSFETs and six 1.2 kV 50 A Z-Rec Schottky diodes per switch position. CAS325M12HM2 features ultra-low loss and low (5 nH) inductance, ultra-fast switching operation, zero reverse recovery current from the diode, and more.


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UltraCMOS® SPDT RF Switch: PE42723

Peregrine_PE42723 _PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a UltraCMOS® SPDT RF switch from Peregrine Semiconductor Corporation. The PE42723 is a HaRP™ technology-enhanced reflective SPDT RF switch designed for use in cable applications, including DOCSIS 3.0/1 cable modem, set-top box and residential gateway. It delivers high linearity and excellent harmonics performance in the 5 to 1794 MHz band, as well as low insertion loss and high isolation performance.


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