Breakthrough high-frequency performance enables next generation applications
Richardson RFPD Inc. announced the availability and full design support capabilities for an UltraCMOS® FET driver from Peregrine Semiconductor Corporation.
The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as GaN Systems’ E-HEMT (enhancement-mode high electron mobility transistor) gallium nitride FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz. High switching speeds result in smaller peripheral components and enable new applications like the Rezence wireless power transfer standard from A4WP (now part of the AirFuel Alliance).
The PE29100 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.
According to Peregrine, additional key features of the PE29100 include:
- High- and low-side FET drivers
- Dead-time control
- Fast propagation delay, 8 ns
- Tri-state enable mode
- Sub-nanosecond rise and fall time
- 2A/4A peak source/sink current
- Flip chip package
To find more information, or to purchase this product today online, please visit the PE29100 webpage. The device is also available by calling 1-800-737-6937.