Articles by Richardson RFPD / Arrow RF & Power

Four-Throw Switch: PE423641

Peregrine_PE423641_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new RF single-pole four-throw switch from Peregrine Semiconductor Corporation. The PE423641 is HaRP™ technology-enhanced and features insertion loss of 0.5 dB and isolation of 32 dB at 1000 MHz, and IIP3 of +68 dBm.


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GaN Power Amplifiers: TGA2583-SM / TGA2585-SM

TriQuint_TGA2583_2585_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for two 2.7 to 3.7 GHz packaged GaN power amplifiers from TriQuint. The TGA2583-SM and TGA2585-SM are designed using TriQuint’s production 0.25-μm GaN on SiC process. The new devices can operate under both pulse and continuous wave (CW) conditions, and both feature RF ports that are fully matched to 50 ohms.


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E-Band Driver Amplifier: MAAM-011167

MACOM_MAAM-011186_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new four-stage E-band driver amplifier from M/A-COM Technology Solutions. The MAAM-011167 is a bare die power amplifier that operates from 71 to 86 GHz and provides 18 dB small signal gain. The input and output are matched to 50Ω with bond wires to external board.


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Three 1200 V SiC MOSFETs

Microsemi_APT40SM120J_40SM120S_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for three new 1200 V, 80 mΩ SiC MOSFETs from Microsemi Corporation. The new MOSFETs are built on SiC MOSFET technology, which features best-in-class RDS(on) vs. temperature, ultra-low gate resistance for minimizing switching energy loss, superior maximum switching frequency, and outstanding ruggedness.


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Richardson RFPD introduces four new RF GaN on SiC HEMTs from TriQuint

Richardson RFPD, Inc. announced the availability and full design support capabilities for four new RF GaN on SiC power transistors from TriQuint. The T1G4004532 is a 45 W (P3 dB, at 3.3 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 16.5 dB (typical) at 3.3 GHz, with an operating voltage of 32 V. It is offered in flanged and flangeless packages.


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