Cree_CAS300M17BM2 and PT62SCMD17_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a new 1.7 kV, 8.0 m Ω, 300 A all-silicon carbide half-bridge module and associated 1.7 kV driver from Cree, Inc.

The CAS300M17BM2 includes C2M™ MOSFETs and Z-Rec™ diodes and features ultra-low loss, high-frequency operation, zero reverse recovery current from the diodes, zero turn-off tail current from the MOSFETs, fail-safe operation, ease of paralleling, and a copper baseplate and aluminum nitride insulator.

The new module enables compact and lightweight systems, offers high efficiency operation, mitigates over-voltage protection, and facilitates reduced thermal requirements and system cost.

The CAS300M17BM2 is ideally suited for a range of applications, including high-frequency resonant converters and inverters, solar and wind inverters, UPS and SMPS, motor drive, and traction.

According to Cree, additional key features of the CAS300M17BM2 include:

  • Drain source voltage (VDSmax): 1.7kV
  • Total switching energy (ESW) (@ 300A, 150 ºC): 23.7mJ
  • On state resistance (RDS(on)) (Typical, VGS=20V, IDS=225A): 8.0m?
  • Package size: 62mm x 106mm x 30mm

The PT62SCMD17 is a dual 1.7kV SiC MOSFET driver designed to drive the CAS300M17BM2 module. According to Cree, it features:

  • Low jitter: typical 1ns
  • +20V/-6V gate driving
  • Over-current protected
  • Switching frequencies up to 125 kHz
  • Adjustable dead and blanking time
  • Dead-time generator
  • Output currents up to +/-20A
  • Under- and over-voltage lock out
  • High dV/dt immunity
  • No optocouplers
  • RS422 input interface
  • Large power supply range: from 15V up to 24V

To find more information, or to purchase these product today online, please visit the CAS300M17BM2 and PT62SCMD17 webpages. The devices are also available by calling 1-800-737-6937.