Richardson RFPD Inc. announced the availability for three ultra-fast 650 V NPT IGBTs. These transistors represent the newest generation of Microsemi IGBTs optimized for outstanding ruggedness and best trade-off between conduction and switching losses. They feature zero reverse recovery, low leakage, anti-parallel silicon carbide diodes, low saturation voltage, low tail current, and more.
RSS
RFMW Ltd. announces design and sales support for a fully integrated PIN limiter / Schottky diode module in a surface-mount package. The Skyworks SKY16602-632LF provides passive receiver protection in wireless or other RF systems ranging in frequency from 200 MHz to 4 GHz. Capable of handling 100 W of pulsed power, the SKY16602-632LF has a very low threshold of approximately 5 dBm. 
Linear Technology Corp. introduces the LTC3807, a low quiescent current synchronous step-down DC/DC controller that draws only 50 µA in standby mode with the output voltage in regulation. The LTC3807 has powerful 1.1 Ohm on-chip MOSFET gate drivers. It operates with a selectable fixed frequency between 50 and 900 kHz and is synchronizable to an external clock ranging from 75 to 850 kHz.
RFMW Ltd. announces design and sales support for the TGF2819-FL and TGF2819-FS GaN transistors from TriQuint. These 32 V devices from TriQuint offer 20 W average power for non-pulsed applications and over 100 W peak power. Covering frequencies up to 3.5 GHz, the TGF2819-FL and TGF2819-FS are input pre-matched for S-Band applications in Radar and avionics.
Metrigraphics has developed new breakthroughs in processing substrate-based ultra-miniaturized thin film circuits. The additive thin film processes used are an alternative to traditional chemical etching, which causes circuit lines to slope, resulting in performance variations and yield issues. Using these additive fabrication techniques, Metrigraphics can manufacture circuits in prototype through high volumes.
Richardson RFPD Inc. announced the availability and full design support capabilities for a range of new, multi-octave, wideband MMIC devices, including a switch and eight amplifiers, from Microsemi Corporation. The new devices provide outstanding electrical performance, with frequency coverage as wide as DC to 22 GHz.
MACOM's GaN on SiC HEMT power transistor for L-Band pulsed radar applications, the MAGX-001214-650L00, is a gold-metalized pre-matched GaN on silicon carbide transistor that offers the highest peak power in the industry for a single-ended power transistor optimized for pulsed L-Band radar applications.
RFMW Ltd. announces design and sales support for adual-band SAW filter module from TriQuint. TheTQQ1212 serves band 34 (2010 to 2025 MHz) and band 39 (1880 to 1920 MHz) in a single, 4x3 mm module. Band 34 passband bandwidth is 15 MHz while band 39 has a 40 MHz bandwidth. Insertion loss in both bands is 3.8 dB max.
Richardson RFPD Inc. announced the availability and full design support capabilities for a new 650 V, 20 A silicon carbide (SiC) Schottky diode from Cree Inc. Benefits of the CVFD20065A include the option of replacing bipolar with unipolar rectifiers, essentially no switching losses, the reduction of heat sink requirements, and the ability to have parallel devices without thermal runaway.
The LTC3622 is a high efficiency, 17 V input capable synchronous buck regulator from Linear Technology that delivers dual 1 A continuous current to outputs as low as 0.6 V. Synchronous rectification delivers efficiencies as high as 95%, while Burst Mode® operation requires only 5 µA of no load quiescent current.