Richardson RFPD Inc. announces availability and full design support capabilities for a 28-volt, 55 W, GaN on SiC HEMT, RF power transistor from TriQuint Semiconductor. The T1G4005528-FS provides 55 W RF output power (P3 dB), with greater than 15 dB of linear gain, and better than 50% drain efficiency at 3.5 GHz.