Triquint-18W-GaNRichardson RFPD Inc. announces availability and full design support capabilities for a 28-volt, 18 W, GaN on SiC HEMT, RF power transistor from TriQuint Semiconductor. The T1G6001528-Q3 provides 18 W RF output power (P3 dB), with more than 10 dB linear gain, and >60% drain efficiency at 6.0 GHz. 

The T1G6001528-Q3 is an excellent choice for many wideband RF amplifier applications, offering exceptional performance from DC to 6 GHz. The T1G6001528-Q3 is available in an industry standard, flangeless ceramic package. Applications for the T1G6001528-Q3 include high-performance wideband power amplifiers, military and civilian radar, commercial/military radio communications systems, test instrumentation, avionics, and commercial/military signal jammers. 

Key features of the T1G6001528-Q3 operating at 6 GHz include:

• Linear Gain: > 10 dB
• Output Power (P3dB): 18W
• Drain Efficiency: >60%
• Thermal Resistance, junction to case, ΘJC = 5.0 °C/W
• Typical Bias: 28V drain supply, 50mA drain quiescent current, -3.7V gate supply
• Package Size: 5.1mm x 3.8mm x 2.4mm (industry standard flangeless)
• RoHS Compliant  

The device is constructed with TriQuint’s proven 0.25 μm GaN on SiC HEMT production process, which features advanced field plate techniques to optimize both power and efficiency at high drain bias operating conditions. This optimization can lower overall system cost in terms of fewer amplifiers required in the line-up (for a given output power level) and lower thermal management costs. 

To find more information, or to purchase this product today on the Richardson RFPD website, please visit the T1G6001528-Q3 product webpage. 

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