SemiGen Inc., an ISO and ITAR registered RF/microwave assembly, automated PCB manufacturing, and RF supply center is now offering a full range of RF/microwave and digital design/engineering services. SemiGen/SWT can help with unique RF and digital engineering challenges. They can also help with writing the spec, manufacturing the first prototype, redesign and qualification, and eventually, full-volume assembly.
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RFMW Ltd. announces design and sales support fortwo 45 W GaN on SiC transistors from TriQuint. The T1G4004532-FL (flanged) and T1G4004532-FS (earless) are wideband, DC to 3.5 GHz devices offering 17 dB of gain, nearly twice that of competing GaN devices. Both transistors are input matched for S-band operation and operate from a 32 V supply.
Richardson RFPD Inc. announces availability and full design support capabilities for a wideband, 20 W load RF termination from Wavelex. The WLD000130A1 offers wide frequency band operation, from DC to 13.0 GHz and features 20 W continuous wave (CW) power handling. It is versatile for a range of applications, including satellite communications, broadcast, RF bench test, and mobile base station.
Richardson RFPD Inc. announced the availability and full design support capabilities for a new 1.2 kV, 5.0 mΩ all-silicon carbide (SiC), half-bridge module from Cree, Inc. The new CAS300M12BM2 is available in a 62 x 106 x 30 millimeter package and includes a Z-FET™ MOSFET and a Z-Rec™ diode in a half-bridge configuration.
The Ensemble® IOM-200 (IO Mezzanine) XMC module and IOR-280 RTM from Mercury Computer Systems provide the industry’s leading 10 Gbps ethernet IO density. When two IOM-200s are configured with the IOR-280 rear transition module (RTM), up to eight channels of 10 Gbps Ethernet can be supported per 6 U open VPX slot.
M/A-COM Technology Solutions Inc. (“MACOM”), announced the newest entry in its portfolio of GaN in plastic power module products. Optimized for pulsed Avionics applications in the 960 to 1215 MHz band, MACOM’s new 2-stage, fully matched GaN surface mount power module scales to peak pulse power levels of 100 W in a 14 x 24 mm package size.
Metrigraphics announced it has achieved large-scale production of micron-scale flexible circuits six or more layers high, with traces (circuit lines) as narrow as three microns (11.81 x 10-5 inches). The circuits are so flexible they can be wrapped around objects with diameters as small as a pencil. Products include single-layer flex, multi-layer flex, coils, sensor components, and electrodes (neuro-stimulation).
Anritsu Co. addresses the market need for value and performance when testing RF passive devices with the introduction of the ShockLine™ MS46522A 2-port RF VNA family with frequency coverage from 50 kHz to 8.5 GHz. The ShockLine MS46522A VNA is designed for testing passive devices such as cables, connectors, filters, and antennas in a wide variety of engineering, manufacturing and education applications.
RFMW Ltd. announces design and sales support for Skyworks SKY16601-555LF PIN diode limiter module covering the frequency range of 0.5 to 6.0 GHz. The SKY16601-555LF addresses a growing need for receiver low noise amplifier (LNA) protection in microwave applications. It is a fully integrated PIN diode, low-threshold limiter module in a 2.5 x 2.5 mm SMT package.
The SemiGen SLP7100 series of limiter diodes is processed with a high-resistivity epi that has thin, intrinsic layers. These devices are typically in the 2 to 20 micron range of epi thickness and can be gold-doped to achieve specific performance goals. They are used in passive or active limiter designs in the 100 MHz to 30 GHz frequency range. Ideal applications for these diodes are waveguide, stripline, coax, or microstrip, in single- or multi-chip devices.