Devices feature integrated zero recovery, low leakage, anti-parallel SiC diodes

Richardson RFPD Inc. announced the availability and full design support capabilities for three 650 V non-punch-through (NPT) insulated-gate bipolar transistors (IGBTs) from Microsemi Corporation.

These ultra-fast 650 V NPT IGBTs represent the newest generation of Microsemi IGBTs optimized for outstanding ruggedness and best trade-off between conduction and switching losses. They feature zero reverse recovery, low leakage, anti-parallel silicon carbide diodes, low saturation voltage, low tail current, short-circuit withstand ratings, and high-frequency switching capabilities.

Available in 45A and 70A current ratings, these cutting edge 650V NPT IGBTs allow developers to reduce total system cost by replacing more costly 600V to 650V MOSFETs in industrial applications up to 150 kHz.

The new IGBTs offer the industry’s best loss performance—approximately 8% better than the closest competing IGBTs. They leverage Microsemi's Power MOS 8™ technology and are recommended for applications such as induction heating (IH), motor control, general purpose inverters, and uninterruptible power supplies (UPS).

The new 650V devices expand Microsemi’s product offering of NPT IGBTs with integrated SiC anti-parallel diodes, which was previously limited to 1200V devices:

To find more information, or to purchase these products today online, please visit the APT45GR65BSCD10, APT45GR65SSCD10 and APT70GR65B2SCD30 webpages, or browse the complete line of 650V and 1200V NPT IGBTs. The devices are also available by calling 1-800-737-6937.