Richardson RFPD, Inc. announced the availability and full design support capabilities for three new 650V non-punch-through (NPT) insulated-gate bipolar transistors (IGBTs) from Microsemi Corp..
These ultra-fast 650V NPT IGBTs represent the newest generation of Microsemi IGBTs optimized for outstanding ruggedness and best trade-off between conduction and switching losses. They feature zero reverse recovery, low leakage, anti-parallel silicon carbide diodes, low saturation voltage, low tail current, short-circuit withstand ratings, and high-frequency switching capabilities.
Available in 45A and 70A current ratings, these cutting edge 650V NPT IGBTs allow developers to reduce total system cost by replacing more costly 600V to 650V MOSFETs in industrial applications up to 150 kHz.
The new IGBTs offer the industry’s best loss performance—approximately 8% better than the closest competing IGBTs. They leverage Microsemi's Power MOS 8™ technology and are recommended for applications such as induction heating (IH), motor control, general purpose inverters, and uninterruptible power supplies (UPS).