Skyworks introduces eight low noise, variable gain receive modules for LTE and WCDMA infrastructure applications requiring low noise and high linearity. The SKY65369-11, SKY65370-11, SKY65371-11, SKY65372-11, SKY65373-11, SKY65374-11, SKY65375-11, and SKY65376-11, which are ideal for all wireless infrastructure OEMs and ODMs, are low noise, highly linear VGA modules that operate in the 700 to 2600 MHz range and feature very low return loss.
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RFMW Ltd. announces design and sales support for NXP’s BLF2425M7LS-250P. This highly efficient (51% drain efficiency) LDMOS transistor is internally matched for broadband performance from 2400 to 2500 MHz, supporting ISM (industrial, scientific and medical) applications. Featuring 15 dB of gain, the NXP BLF2425M7LS-250P runs off a 28 V supply.
RFMW Ltd. announces design and sales support for a 5 to 1200 MHz passive, 2-way splitter from MiniRF. The MRFSP5725 provides a low cost, highly reliable solution for broadband CATV designs. Characterized for use in 75 ohm circuits, the MRFSP5725 offers 28 dB of isolation with typical insertion loss of only 0.5 dB. Lead free and RoHs compliant, the MRFSP5725 comes in a surface mountable 0.15 x 0.15 x 0.115" package.
RFMW Ltd. announces design and sales support for the BLF2425M6LS180P, a 180 W LDMOS transistor from NXP covering the industrial, scientific and medical (ISM) band of 2400 to 2500 MHz. The BLF2425M6LS180P has applications from solid state heating to RF plasma lamps to RF plasma torches. The BLF2425M6LS180P offers 13.3 dB of gain and runs off a 28 V supply with efficiencies up to 53.5%.
RFMW Ltd. announces design and sales support foran LDMOS power transistor internally matched for broadband operation from 2400 to 2500 MHz. NXP’s BLF2425M7LS140 provides 140 W average CW power with 18.5 dB of gain. The BLF2425M7LS140 draws 1.3 A from a 28 V supply with efficiencies up to 52%. Housed in a ceramic package with solder ears, the BLF2425M7LS140 is a highly rugged transistor for industrial heating applications.
RFMW Ltd. announces design and sales support for NXP’s BLF25M612G LDMOS power transistor offering 12 W average CW output power. The BLF25M612G is designed as a driver amplifier for high power CW applications in the 2400 to 2500 MHz ISM band. Operating from a 28 V supply, efficiency of the BLF25M612G is rated at 58%. Offering a very high gain of 18 dB, this transistor touts excellent ruggedness and thermal stability.
RFMW Ltd. announces design and sales support for a high efficiency, GaN, 5 W, input-matched transistor covering the 5 GHz ISM bands. The TriQuint (Qorvo) TGF3020-SM provides 5.7 W P3dB at 5.4 GHz. The transistor can be tuned for power, gain and efficiency. Linear gain is 12 dB. With wideband performance from 4 to 6 GHz, additional applications include telemetry, C-band radar, and instrumentation. Power added efficiency (PAE) at P3dB measures 53%.
Skyworks introduces a step-down, DC-DC converter for automotive, distributed power, industrial, and medical applications. The 28 V, 3 A, non-synchronous SKY87608-11-577LF is also applicable for general purpose, point-of-load, 16, 20, and 28 V voltage regulators. The converter offers prime thermal performance and space savings in addition to addressing the green-power initiative in the non-portable markets.
Richardson RFPD Inc. introduced the MMRF5014H, a 125 W continuous wave GaN on SiC transistor that offers exceptional wideband and thermal performance. With an extended operational bandwidth (1 to 2690 MHz), high gain (16 dB at 2500 MHz, typical), and high ruggedness, the new transistor is ideally suited for wideband amplifiers in scientific equipment, as well as in military communications applications, including jammers and electronic warfare systems.