RFMW Ltd. announces design and sales support for a high efficiency, GaN, 5 W, input-matched transistor covering the 5 GHz ISM bands. The TriQuint (Qorvo) TGF3020-SM provides 5.7 W P3dB at 5.4 GHz. The transistor can be tuned for power, gain and efficiency. Linear gain is 12 dB.

Packaged as a 3 x 3 plastic QFN, the TGF3020-SM is capable of pulsed and CW operation. With wideband performance from 4 to 6 GHz, additional applications include telemetry, C-band radar, and instrumentation. Power added efficiency (PAE) at P3dB measures 53%. The TGF3020-SM operates from a 32 V supply.