RFMW Ltd. announces design and sales support for NXP’s BLF2425M7LS-250P. This highly efficient (51% drain efficiency) LDMOS transistor is internally matched for broadband performance from 2400 to 2500 MHz, supporting ISM (industrial, scientific and medical) applications.

The earless, ceramic package adds to the excellent thermal stability, creating a 250 W CW power transistor to meet the needs of innovative RF power generation in RF plasma lighting, RF plasma cutting, efficient automotive ignition systems and industrial heating. Flexible power control allows use in precision medical applications such as RF ablation.

Featuring 15 dB of gain, the NXP BLF2425M7LS-250P runs off a 28 V supply. A bolt down version of the BLF2425M7LS-250P is available as the BLF2425M7L-250P.