Semiconductors/RFICs/MMICs

High Power 900MHz ISM FEM

Front End Module: SKY66105-11

RFMW Ltd. announces design and sales support for the Skyworks Solutions SKY66105-11 front end module (FEM). The SKY66105-11 offers high output power (30 dBm) for 902 to 931 MHz, ISM band transmit applications such as smart metering for water, gas and electric. With integrated harmonic filters and a DPDT switch for diversity antennas, this FEM also incorporates on-board matching and integrated shielding thereby reducing required board space and easing design.


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1900W Power Transistor

1900 W Pulsed RF Power Transistor: BLF189XRB

RFMW Ltd. announces design and sales support for a 1900 W pulsed RF power transistor from Ampleon. The BLF189XRB supports industrial applications in the 30 to 150 MHz frequency range such as magnetic resonance imaging (MRI). Offering gain of 23 dB, efficiency is 63%. Excellent ruggedness is a hall mark of Ampleon high power LDMOS and the BLF189XRB can withstand VSWR mismatch as high as 65:1.


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1500W LDMOS Transistor

RF Power Transistor: BLF189XRA

RFMW Ltd. announces design and sales support for a 1500 W CW (1700 W pulsed) RF power transistor from Ampleon. The BLF189XRA spans a frequency range of 30 to 500 MHz for broadcast and industrial applications such as CO2, plasma RF, and VHF radio. Offering gain of 26.5 dB in CW operation, efficiency is 75%.


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PS-2G18G-360-8D

8-Bit Vector Phase Shifter: PS-2G18G-360-8D

PMI Model PS-2G18G-360-8D is a 2 to 18 GHz, 8-Bit, vector phase shifter making it ideal for frequency translation where continuous monotonic phase shifting is required.  This model features high speed switching (<410 ns measured), phase shift 360° with a ±15° accuracy (typical), 18.0 dB maximum insertion loss  and typically lower than 60 dB harmonic distortion.   Package Size: 4.25” x 3.50” x 1.00”, SMA(F) connectors,DC-37P,  Sub Miniature D Multi-Pin control connector and operates using ±12V to ±15V at ±100 mA maximum.


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QPD2795

High Power Transistor: QPD2795

RFMW Ltd. announces design and sales support for a high efficiency, high power transistor from Qorvo. The Qorvo QPD2795 GaN power transistor has a P3dB of 360W for Band 7 and Band 41 wireless communications infrastructure and microcell designs in the 2.5 to 2.7GHz frequency range. Offering typical drain efficiency of 72% and linear gain of 22dB, the QPD2795 draws 700mA from a 48V supply. Qorvo packages this transistor in an eared, ceramic, air cavity package.


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