Semiconductors/RFICs/MMICs

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RFMW Ltd. announces design and sales support for a high linearity MMIC power doubler designed to support DOCSIS 3.1 CATV requirements. The Skyworks ACA1216 offers 27.5 dB typical gain at the upper end of its 50 to 1218 MHz frequency range. Ideal for hybrid fiber coax (HFC) equipment including line extenders, nodes, system amplifiers and headend equipment, the ACA1216 operates using 12 V and 725 mA.

SemiGen Inc. has added a series of new Schottky Diodes to its expanding product offerings. SemiGen silicon-based Schottky diodes utilize various metal schemes to provide excellent performance for low, medium and high barrier applications through 40 GHz. This series of schottky diodes feature small junction capacitances, low I/F noise, low resistance, and multi-junction chips for optimum performance.

Custom MMIC recently developed a Tech Brief to help you simplify your biasing design approach, reduce your bill of materials, and reduce extraneous noise sources with Low Noise Amplifier MMICs (LNAs) that utilize only a positive bias. Download the tech brief, “Throw out complex bias sequencers along with the negative voltage supply” at www.custommmic.com.

SemiGen Inc. offers a series of Point Contact Mixer Diodes, the 1N series. The 1N series point contact mixer diodes perform into the Ka-band. Each device in the series ideally designed with noise figures as low as 5.5 dB at 3.060 GHz and 6.0 dB at 9.375 GHz. With VSWR’s of 1.3:1 and impedances ranging from 200-600 Ω, these devices can serve as drop in replacements for all military and commercial requirements. 

RFMW Ltd. announces design and sales support for the Skyworks Solutions SKY65903-11, front-end module (FEM) featuring a low-noise amplifier and integrated pre- and post- filters for GPS receiver applications.  The SKY65903-11 features in-band IIP3 of -7.3 dBm, small signal gain of 14.2 dB and noise figure of 1.7 dB for improved signal-to-noise ratio.  Integrated pre- and post-filters provide low in-band insertion loss and excellent rejection (76 dBc at 2.4 GHz.)

SemiGen has added a series of limiter diodes to its expanding product offerings, SLP7100 series. The SLP7100 limiter diodes are processed with a high-resistivity epitaxial wafer (epi) that has thin intrinsic layers. These devices are 2 to 20 microns thick and can be gold doped to achieve specific performance goals. The SLP7100 limiter diodes are used in passive or active limiter designs in the 100 MHz to 30 GHz frequency ranges.

SemiGen Inc. and RF Supply Center offers a series of beam lead PINs, the SBL 2000. The SBL2000 beam lead PIN diodes feature switching speeds as low as 3 ns with both low capacitance and resistance. SemiGen’s beam lead PINs are optimally designed during assembly for high levels of mechanical strength and stability with an operating temperature ranging from -55^oC to +150^oC.

Custom MMIC is pleased to announce a GaAs MMIC frequency doubler, the CMD225C3. The released CMD225C3 operates with an input frequency range of 4 to 8 GHz. This passive frequency doubler can be driven with a +15 dBm input signal with a low conversion loss of 13 dB, and excellent Fo and 3 Fo isolations of at least 47 dBc. THe CMD225C3 is a 50 ohm matched design to eliminate the need for RF port matching.

Richardson RFPD Inc. announced the availability and design support capabilities for an UltraCMOS® FET driver from Peregrine Semiconductor Corporation. The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as GaN Systems’ E-HEMT gallium nitride FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz.

Richardson RFPD, Inc. announced the availability and  support capabilities for four GaN on SiC high-electron-mobility transistors from Qorvo.  The QPD1000 is a 15 W (P3dB), 50 Ω-input matched discrete GaN on SiC HEMT, the QPD1003 is a 500 W (P3dB) internally-matched discrete GaN on SiC HEMT and the 125 W (P3dB) QPD1008L and 65 W (P3dB) QPD1015L are wideband unmatched discrete GaN on SiC HEMTs.