Semiconductors/RFICs/MMICs

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RFMW Ltd. announces design and sales support for a Wi-Fi 802.11a/n/ac/ax front end module. The Qorvo QPL7210 integrates a 2.4 GHz low noise amplifier (LNA), an LNA bypass and high selectivity receive BAW filter for wireless coexistence.

IGT3135M135, a 50-Ohm matched high-power GaN HEMT transistor, that operates at the instantaneous operating frequency range of 3.1 to 3.5 GHz, supplying up to 135 W of peak pulsed power.

IGT5259L50 is a high-power GaN-on-SiC HEMT transistor that is fully-matched to 50-Ohms and supplies 50 W of peak pulsed output power at 50 V drain bias. This product covers the frequency range 5.2 to 5.9 GHz with instantaneous response.

IGT2731M130 is a 50-Ohm matched high-power GaN HEMT transistor, suppling a minimum of 130 W of peak pulsed power, a gain of 13.5 dB and a drain efficiency of 55 percent. 

RFMW Ltd. announces design and sales support for an integrated front end module (iFEM) designed for Wi-Fi applications. Qorvo’s QPF7200 integrates a 2.4 GHz power amplifier, bypassable transmit BAW filter, LNA with bypass function and receive coexistence BAW filter into a single module.

Pasternack has launched a line of RF loads with ten different types of connectors for quick mating. Typical applications include DAS systems, base stations, antennas and test instrumentation.

 

RFMW Ltd. announces design and sales support for two, highly integrated front-end modules from Qorvo. The QPB9324 and QPB9325 combine a high power handling (52 W) switch with two low noise amplifiers targeting wireless infrastructure applications configured for TDD-based architectures.

Custom MMIC discusses the importance of phased-array radar systems as well as the associated benefits and drawbacks and the new path forward.

RFMW Ltd. announces design and sales support for the Skyworks Solutions SKY66114-11, a low power front end module for bluetooth low energy (BLE) applications. A fully integrated 2.4 GHz module, the SKY66114-11 offers 23 dBm Tx output power which quadruples the effective range of standalone system on chip (SoC) solutions.

MACOM announced an entry in its GaN-on-Si power transistor portfolio for pulsed L-Band radar systems targeted for airport surveillance radar (ASR) applications at 1.2 to 1.4 GHz. The MAGX-101214-500 deliverd industry-leading efficiency at peak pulse power levels up to 500 W.