IGT3135M135, a 50-Ohm matched high-power GaN HEMT transistor, that operates at the instantaneous operating frequency range of 3.1 to 3.5 GHz, supplying up to 135 W of peak pulsed power. This transistor is a depletion-mode device that requires a negative gate bias voltage and bias sequencing.
This product comes in Integra’s package PL44A1, size is at 0.800 in. wide and 0.400 in. long. Earless, it is 0.400 in. wide and 0.400 in. long. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.