IGT5259L50 is a high-power GaN-on-SiC HEMT transistor that is fully-matched to 50-Ohms and supplies 50 W of peak pulsed output power at 50 V drain bias. This product covers the frequency range 5.2 to 5.9 GHz with instantaneous response, and features 14 dB of gain, and 43% efficiency at 1 millisecond/15% pulse conditions. Designed for pulsed C-Band Radar applications, it provides excellent thermal dissipation, and measures 0.800” (20.32mm) wide and 0.400” (10.16mm) in length.