Skyworks has introduced a highly integrated 470 to 510 MHz front-end module (FEM) that is ideal for smart energy, smart metering (electric, gas, water, heat), security, RFID, industrial and other Internet of Things (IoT) applications. The SKY66115-11 FEM operates over a wide variety of supply voltages at low power consumption, and comes in a small 4 x 4 x 0.9 mm, 16-pin multichip module solution. Its extended range more than doubles when compared to a standalone system-on-chip solution.
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RFMW Ltd. announces design and sales support for a 5 G front end module (FEM). The Qorvo RFFM4554 integrates a high linearity SPDT RF switch with a low noise amplifier (LNA) having bypass capability. The LNA receive gain is 13.5 dB with noise figure rated at a very low, 1.7 dB. With frequency coverage from 4.9 to 5.925 GHz, the Qorvo RFFM4554 supports 5 G WiFi CPEs, gateways and set top boxes.
Linear Technology introduces the LTM8049, a dual output, two-function DC/DC µModule® (power module) regulator in 15 mm x 9 mm x 2.42 mm BGA package. One function is SEPIC (single-ended primary-inductor converter) in which the output voltage is regulated while the input voltage can vary to be less, equal or more than the value of the output voltage. 
RFMW Ltd. announces design and sales support for a 200 W CW power transistor from Ampleon. The CLF1G0035S-200P GaN HEMT is usable from DC to 3.5GHz for broadband applications in wireless infrastructure, public mobile radios, jammers and Radar. The Ampleon CLF1G0035S-200P offers up to 11 dB of associated gain in CW applications or 14 dB of gain in pulsed applications. The transistor draws only 300 mA in class AB configurations with 44% typical efficiency.
Richardson RFPD Inc. announced the availability and full design support capabilities for two monolithic phase and amplitude controllers. The PE46130 and PE46140 are Peregrine's additions to its MPAC product family and offer maximum phase-tuning flexibility for Doherty PA optimization. These monolithic RFICs integrate a 90° RF splitter, digital phase shifters and a digital step attenuator along with a low-voltage CMOS serial interface. They cover a phase range of 87.2° in 2.8° steps.
Richardson RFPD Inc. announced the availability and full design support capabilities for a new LDMOS transistor from NXP Semiconductors. The MRF1K50H builds on the success of NXP's 1250 W MRFE6VP61K25H, delivering 1500 W CW at 50 V, along with superior ruggedness and thermal performance. The MRF1K50H can reduce the number of transistors in high-power RF amplifiers- decreasing amplifier size and BOM.
Exodus introduces the AMP1071, a solid-state RF amplifier module covering the entire ultra-wide 2.0 to 20.0 GHz frequency range instantaneously at 20 W CW minimum. Using State of the Art GaN devices, the AMP1071 operates from a 32 VDC source at less than 10 A consumption. This module is suitable for use with all single channel modulation standards and applications requiring high power and ultra-wide band coverage.
RFMW Ltd. announces design and sales support for a single-chip front end module serving battery powered or portable applications such as wireless meter reading and smart energy. The Qorvo RFFM6900 covers the 900 MHz ISM band (890 to 960 MHz) with up to 1 W of transmit power. Integrated into the FEM is a PA, SP3T antenna switch, transmit harmonic filter, transmit through path, LNA with bypass mode and matching components for 50 ohm I/O.
Richardson RFPD Inc. announced the availability from stock and full design support capabilities for a fastPack 0 SiC power module from Vincotech. The 10-PC094PB065ME01-L637F06Y is a faster, cooler and more efficient power module designed for switching frequencies up to 400 kHz. It features a fast-switching 900 V SiC MOSFET that outperforms 1200 V SiC MOSFETs (+8% efficiency at a light load and +3% at full load) and provides a higher safety margin than 650 V MOSFETs.
Exodus introduces the AMP1064 module covering the entire instantaneous 20 to 6000 MHz frequency range at 20 W CW minimum and 25 W CW typical with flatness of less than 4 dB peak to peak. Using State of the Art GaN devices and operating from a 50 VDC source at less than 3 Amp consumption this module is suitable for use with all single channel modulations standards and applications requiring high power and ultra-wide band coverage.