RFMW Ltd. announces design and sales support for a high efficiency, high power transistor from Qorvo. The Qorvo QPD2795 GaN power transistor has a P3dB of 360W for Band 7 and Band 41 wireless communications infrastructure and microcell designs in the 2.5 to 2.7GHz frequency range. Offering typical drain efficiency of 72% and linear gain of 22dB, the QPD2795 draws 700mA from a 48V supply. 

Qorvo packages this transistor in an eared, ceramic, air cavity package.