RFMW announces design and sales support for a high-power transistor from Ampleon. The ART2K0FE power LDMOS transistor provides 2000 W of pulsed RF energy for ISM applications in the HF to 400 MHz band including plasma generators, MRI systems, CO2 lasers and particle accelerators. Other uses are found in radio and VHF TV broadcast transmitters as well as HF communications and  Radar systems in the Aerospace industry. High breakdown voltage enables class E operation up to 50 volts VDS while the ART2K0FE is qualified up to a maximum VDS of 65 V. Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor.