RFMW, Ltd. announces design and sales support for a Qorvo GaN on SiC transistor serving radar, mil comm, avionics, jammers and wideband amplifier applications. The QPD1009 is a 15W transistor housed in a 3 mm x 3 mm plastic QFN and operational from DC to 4GHz. Operating from bias voltages of 28 to 50V, power added efficiencies are as high as 72 percent. Small signal gain is rated at 24dB. According to RFMW, this combination of high gain, high efficiency, low cost and small size make the QPD1009 an ideal unmatched transistor.