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Silicon BiCMOS: The Optimal Technology for RF Power

The debate over GaAs versus CMOS has been reinvigorated by recent industry events. This includes the sale of CMOS cellular power amplifier (PA) house Axiom Microdevices to GaAs cellular PA manufacturer Skyworks as well as the emergence from “stealth mode” of CMOS cellular PA startups Black Sand Technologies and Javelin Semiconductor. In terms of market share, since TRW Semiconductor paired with RF Micro Devices in the mid-­‐ to-­‐late 1990s, the GaAs heterojunction bipolar transistor (HBT) has been the standard bearer for mobile phone PA performance, cost, and manufacturability. GaAs houses that design, manufacture and package their own PAs and other RF components dominate today’s cellular power amplifier market.

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Automatic Test Procedure for RF Characterization of C-band Rotary Field Phase Shifter

This article presents the concept and methodology for the realization of an automatic test procedure based on LabVIEW for RF characterisation of a C-band rotary field phase shifter. Using this software, all the characteristics of a phase shifter intended for phased array application, such as differential phase shift, insertion loss, return loss, rms phase error, insertion phase etc, are measured and displayed graphically.
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What is Packet Microwave?

The growth in mobile broadband services is driving a sea change in the technologies employed to build and operate mobile networks. In particular, the introduction of all-IP transport promises to replace traditional time division multiplexed (TDM) networks to provide network scalability and lower operational costs. To support this network evolution, a new class of licensed microwave backhaul solutions has been introduced to the market, known variously as Packet All-IP or Next Generation radios.
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