Richardson RFPD, Inc., an Arrow Electronics company, announced the availability and full design support capabilities for a new GaN high-power amplifier (HPA) from United Monolithic Semiconductors (UMS).

The CHA8312-99F is a two-stage GaN HPA that operates from 8 to 12 GHz and provides 17 W output power, 50 percent power added efficiency and 26 dB small signal gain. The part is developed on a robust 0.15 µm gate length GaN on SiC HEMT process and is available as a bare die.

The new device is ideal for defense applications and is also suitable for a wide range of microwave applications and systems such as radar, test equipment and communication.

Additional key features of the CHA8312-99F include:

  • Pout: +42.5 dBm at +23 dBm input power
  • Input return loss: > 17 dB
  • Output return loss: > 11 dB
  • DC bias: 20 V at 320 mA
  • Chip size: 3.99 x 3.12 x 0.07 mm.