Items Tagged with 'gain'

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M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced today a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. 

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 200 W solid state, broadband, high power pallet amplifier featuring Freescale Semiconductor Inc. (Freescale) enhanced rugged LDMOS devices.

Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added four new amplifiers in die form to its product family: the CMD164, 165, and 173 distributed amplifiers, and the CMD166 driver amplifier.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new evaluation kit for a 5W GaN MMIC power amplifier from Nitronex.

Hittite Microwave Corp., a of complete MMIC based solutions for communication & military markets, has introduced the HMC1023LP5E, a new addition to its IF/Baseband Processing integrated circuit product line.

TriQuint Semiconductor Inc. has released three new packaged GaAs RF power amplifiers that deliver high output, gain and efficiency for commercial and defense applications including point-to-point microwave radio, radar, VSAT and related applications.

Hittite Microwave Corp., the world class supplier of complete MMIC based solutions for communication & military markets, announces the release of the two new literature pieces.

Mini-Circuits' new PGA-106 series of amplifiers deliver a winning combination of high dynamic range, low noise, and flat gain, fine-tuned to meet specific customer demands across a wide range of 75 Ω systems.

Pulse Electronics Corp., a leading provider of electronic components, introduces a new line of Shadow low profile transit (SLPT) NMO and direct mount antennas to support public safety, WLAN, smart grid/smart metering, 3G, and 4G applications including long term evolution (LTE). These high-performance, rugged, IP-67 rated antennas are provided in a slim, low profile radome of only 2.5" to 3" (63.5 to 76.2 mm) tall with a 1.5" (38.1 mm) diameter base and high gains of 4 to 5.6 dBi.

RF Micro Devices Inc. announced that RFMD has production released two highly linear gallium nitride (GaN) RF unmatched power transistors (UPTs) —RFHA3942 (35W) and RFHA3944 (65W) — that deliver superior linear performance versus competing GaN transistors.