RFMW Ltd. announces design and sales support for a 9 to 10 GHz, 35 W, GaN power amplifier targeted towards weather and marine radar applications. The Qorvo TGA2622-SM provides a saturated output power of 45.5 dBm with 18 dBm input. Power added efficiency is >42% and large signal gain is 27.5 dB. For non-saturated applications, small signal gain is >30 dB.
RFMW Ltd. announces design and sales support for a B1 uplink filter. The Qorvo TQQ7301 uses BAW technology providing high isolation and low loss for small cells, LTE data cards, repeaters and base station infrastructure applications. Covering the 60 MHz bandwidth of 1920 to 1980 MHz, insertion loss is only 4 dB while attenuation of unwanted signals is 30 dB. Additionally, the TQQ7301 can handle up to 27 dBm of input power.
RFMW Ltd. announces design and sales support for a front-end module (FEM) designed for GPS and GLONASS applications. TST’s TN0081A contains a high performance pre-SAW filter, low noise amplifier (LNA) and post-SAW filter providing 18.5 dB of in-band gain and very high out-of-band rejection of unwanted signals. Relative to the center frequency of 1575 MHz, rejection is 85 dBc from 704 to 915 MHz and 75 dBc from 1710 to 1980 MHz.
RFMW Ltd. announces design and sales support for a 7-bit digital attenuator from Qorvo. The QPC6713 features high linearity over the entire 31.75 dB gain control range in 0.25 dB steps. Qorvo offers this DSA for point-to-point radio, 2 G through 4 G base stations, WiFi transceiver and other applications within its 50 to 6000 MHz frequency range. Overshoot free transient switching performance is a highlight of this attenuator along with a highly linear input IP3 of 55 dBm.
RFMW Ltd. announces a pair of Peregrine Semiconductor, high frequency, SOI switches. The PE42525 and PE426525 are SPDT switches operating from 9 KHz to 60 GHz. Both switches offer fast, 8 nS switching time and high input linearity of 48 dBm IIP3. The PE42525 finds applications in test & measurement, microwave backhaul and communications systems and the PE426525 is targeted towards harsh industrial applications.
RFMW Ltd. announces design and sales support for the 392P0000, 12 Amp pulsed switch from XSYSTOR Inc. The 392P0000 MOS type switch is placed between the drain choke of the GaN transistor and power supply. It works with XSYSTOR 100 and 200 series controllers to protect, operate, and modulate the GaN device. The unit is rated for drain voltages from 28 to 80 V with very-low Rds ON.
RFMW Ltd. announces design and sales support for a high isolation, absorptive switch. The Qorvo RFSW6024 supports WIFi, LTE, 4G and general purpose wireless infrastructure from 5 to 6000 MHz. This SPDT switch offers 60 dB of isolation at 2 GHz and IIP3 of 66 dBm. Absorptive, it can handle a max CW input of 36 dBm. Insertion loss is only 0.75 dB and switching speed is 250 nS.
RFMW Ltd. announces design and sales support for a plastic GaN transistor from Qorvo. The TGF2978-SM provides 20 W of saturated power from 8 to 12 GHz for various applications including marine and weather radar, military radar and avionics. Operational to very low frequency, the recommended bias voltage is 32 V. The TGF2978-SM provides >46% PAE and small signal gain of >11 dB at mid X-band frequencies.
RFMW Ltd. announces design and sales support for a digital step attenuator (DSA). The Qorvo RFSA3623 offers 6-bits of attenuation with 0.25 dB LSB step size providing 15.75 dB of attenuation range from 5 to 6000 MHz. Featuring overshoot-free transient switching between attenuation steps, the RFSA3623 is ideal for wireless infrastructure, military radio, land mobile radio and access points.
RFMW Ltd. announces design and sales support for Qorvo’s TQP9424, a 0.5 W power amplifier for small cell radios. Spanning the 2300 to 2400 MHz frequency band, this internally matched amplifier covers band 30 and band 40 wireless infrastructure applications. The TQP9424 has 36 dB of gain and -47 dBc ACLR at 27 dBm. Recommended supply voltage is 4.5 V with 470 mA current draw.