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In Print

May 2013 Digital Edition Online Edition

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From a Russian Source

Oscillator and synthesizer developments in Russia

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The Premier of EDI CON

A look at an emerging community and its unique technology needs in a recap of EDI CON 2013

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Efficiency Enhanced Amplifier Using a Digitally-Controlled Dynamic Bias Switching Circuit

The MWJ Buyer's Guide

Click this featured vendor's logo for the latest RF/microwave products, catalogs, brochures and company news.
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Avago acquires Javelin

California receives first-ever white space broadband network

Cobham purchases Axell Wireless Ltd.

MTT-S IMS 2013 Online Show Daily

Disposable wireless heathcare sensor market shows signs of life

TPR1000 - SiC High Power Transistors for Next Generation VHF/UHF Radar

- Wireless Trends to Look for at MWC 2013

LTE and WSN - Wireless Sensor Networks: Overcoming the Challenges to Reach $2 B in 2021

Design Engineer - Phase Noise Measurements and System Comparisons

Director - Phase Noise Measurements and System Comparisons

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Home » Authors » Maury Microwave

Maury Microwave

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Pulsed IV, Pulsed S-Parameters and Compact Transistor Models

April 15, 2012
Maury Microwave
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Introduction to the BILT/IVCAD Pulsed IV, Pulsed S-Parameter and Compact Transistor Modeling system that allows characterization and modeling of GaN FETs


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3.5 mm Precision 
Quick Test Adapter 
Speeds Connections

March 15, 2012
Maury Microwave
No Comments

Introduction to a precision push-on/pull-off 3.5 mm adapter that is compatible with SMA, 3.5 and 2.92 mm connectors


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Mixed-signal Active Load-pull System Breaks the 500 W Barrier

November 4, 2011
Maury Microwave
No Comments
Maury Microwave , in conjunction with Anteverta-mw and NXP Semiconductors , has successfully characterized a NXP 8th generation LDMOS 320 W-rated base station transistor up to 500 W using the fully active MT2000 mixed-signal active load pull system (MSALP). This base station transistor was measured at 2.14 GHz, in...
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