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IGT5259L50 is a high-power GaN-on-SiC HEMT transistor that is fully-matched to 50-Ohms and supplies 50 W of peak pulsed output power at 50 V drain bias. This product covers the frequency range 5.2 to 5.9 GHz with instantaneous response.
Integra Technologies Inc. (ITI), a leading designer & manufacturer of high-power RF transistors, pallets and amplifiers, will be presenting two technical papers at EuMW 2016, taking place October 3-7 at the London ExCel in London, UK.
Integra Technologies Inc. (ITI), a leading designer and manufacturer of high-power RF transistors, pallets and amplifiers, will be showcasing its products at EDI CON USA, taking place September 20-22, at the Hynes Convention Center in Boston, Mass.
Integra Technologies Inc. (ITI), a leading designer and manufacturer of high-power RF transistors, pallets and amplifiers, announced the completion of a 1 kW GaN high efficiency amplifier, IGNP0450M1000, for aerospace radar applications, funded by NASA/JPL through SBIR Phase I and II grant awards.
Integra Technologies Inc. (ITI), a manufacturer of high power pulsed RF transistors, announced the development of the world’s largest LDMOS pulsed device designed specifically to operate in S-band frequency range. The ILD2731M140 is a high power pulsed RF transistor designed specifically to operate in the 2.7 to 3.1 GHz...
Integra Technologies Inc. (ITI) announced the development of several high powered LDMOS devices designed specifically to operate in the 960 to 1215 MHz frequency range. Integra now provides a LDMOS line-up from 15 W to over 500 W of output power in support of the TACAN communication market with...
Integra Technologies Inc. (ITI) announced the development of the three new 50 ohm modules that integrate numerous RF power transistors for higher power and gain performance on a single PCB than can be obtained with individual devices alone. The ILP1214EL200 is a two-stage, high gain pallet utilizing LDMOS devices...
Integra Technologies Inc. (ITI) announced the development of High Voltage Gallium Nitride on Silicon technology. Leveraging a world class design team and internal wafer fabrication facility with nearly two years of research and development has culminated in the announcement and launch of two new products: The IGN2731M25 and IGN2731M50....
Integra Technologies Inc. (ITI), a leading designer and manufacturer of high-power RF transistors, pallets and amplifiers, announced the completion of a 1 kW GaN high efficiency amplifier, IGNP0450M1000, for aerospace radar applications, funded by NASA/JPL through SBIR Phase I and II grant awards.