Articles by Integra Technologies Inc.
May 25, 2010
Integra Technologies Inc. (ITI), a manufacturer of high power pulsed RF transistors, announced the development of the world’s largest LDMOS pulsed device designed specifically to operate in S-band frequency range. The ILD2731M140 is a high power pulsed RF transistor designed specifically to operate in the 2.7 to 3.1 GHz...
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May 25, 2010
Integra Technologies Inc. (ITI) announced the development of several high powered LDMOS devices designed specifically to operate in the 960 to 1215 MHz frequency range. Integra now provides a LDMOS line-up from 15 W to over 500 W of output power in support of the TACAN communication market with...
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May 25, 2010
Integra Technologies Inc. (ITI) announced the development of the three new 50 ohm modules that integrate numerous RF power transistors for higher power and gain performance on a single PCB than can be obtained with individual devices alone. The ILP1214EL200 is a two-stage, high gain pallet utilizing LDMOS devices...
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May 20, 2010
Integra Technologies Inc. (ITI) announced the development of High Voltage Gallium Nitride on Silicon technology. Leveraging a world class design team and internal wafer fabrication facility with nearly two years of research and development has culminated in the announcement and launch of two new products: The IGN2731M25 and IGN2731M50....
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