Integra Technologies Inc. (ITI), a leading designer and manufacturer of high-power RF transistors, pallets and amplifiers, announced the completion of a 1 kW GaN high efficiency amplifier, IGNP0450M1000, for aerospace radar applications, funded by NASA/JPL through SBIR Phase I and II grant awards. An additional 200 W high efficiency GaN amplifier for shorter-term programs has also been completed through an SBIR Phase IIX grant award.

“GaN technology’s inherent low capacitances, on-state resistance and high bias operation facilitate high efficiency high power amplifier designs through harmonic tuning”, say principal investigator James Custer and lead scientist Dr. Gabriele Formicone, Integra’s core technical team involved in the project. “The 200W and 1kW GaN radar amplifiers with almost 80 percent efficiency demonstrate Integra’s capabilities to support aerospace programs in other frequency bands, and show its commitment to providing solutions for various defense, commercial and scientific aerospace applications.” 

Samples and Availability

Integra Technologies Inc. designs and builds high power RF transistors, pallets and amplifiers based on each customer’s specific requirements and needs. For further information, please email More information on Integra can be found at