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ARTICLES

Fujitsu begins sample shipments of 150 V breakdown GaN power device

Fujitsu Semiconductor Europe
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Fujitsu Semiconductor Europe (FSEU) announced the release of MB51T008A, a silicon substrate-based, GaN power device that features a breakdown voltage of 150 V.


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Fujitsu and MSC sign Europe-wide distribution agreement

Fujitsu Semiconductor Europe
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Fujitsu Semiconductor Europe(FSEU) and MSC Vertriebs GmbH have signed a pan-European distribution agreement.


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