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Articles by WIN Semiconductors

WIN Semiconductors Releases Its Next Generation 0.15 μm Power PHEMT Technology Platform

Extending its lead in GaAs PHEMT technology, WIN Semiconductors Inc. has released a next generation 0.15 μm PHEMT process, named PP15-50/PP15-51. Win will spotlight this process, which is for high frequency power products operating at up to 6 V, at EuMW 2011 in Manchester. Win is exhibiting in booth...
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WIN Semiconductors Releases 0.25 μm Design Kits

WIN Semiconductors announced the availability of a set of design kits for its PP25 family of 0.25 μm optical gate PHEMT technologies for use with Advanced Design System (ADS) EDA software from Agilent Technologies. "These kits offer an improved circuit design environment for Ku- and Ka-band applications. The PP25-xx...
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WIN Semiconductors Opens Fab B

WIN Semiconductors announced that is has opened FAB B in Taiwan. Co-located in the Hwaya Technology Park with FAB A, FAB B will offer cost-effective synergy in operations. FAB B capacity of 5K Wafer Per Month (WPM) in addition to the existing FAB A operating capacity of 7K WPM...
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Auriga and WIN Announce Models for New PHEMT Process

Auriga Measurement Systems LLC and WIN Semiconductors announced their modeling collaboration for the release of WIN’s new Ku- and Ka-band GaAs PHEMT process. Auriga’s nonlinear Large Signal Model (LS6) will be offered and distributed by WIN to its PP-25 customers. The models were validated against load-pull measurements and accurately...
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WIN Announces Foundry PDK for Use with Agilent's ADS

WIN Semiconductors announced the availability of a process design kit (PDK) for H2W PH50-00 process, which includes Enhancement/Depletion-mode PHEMT and HBT process technology. The WIN PDK, developed for use with Advanced Design System (ADS) EDA software from Agilent Technologies, enables high-frequency RF and microwave designers to create compact integrated...
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