At the European Microwave (EuMW) conference in Nuremberg, WIN Semiconductors discussed a new chip-scale GaAs process platform that integrates all the circuit functions for a millimeter wave front-end module. The process is targeting 5G transceivers operating in the 28 to 40 GHz range. Bands at 28 and 39 GHz are being evaluated by AT&T and Verizon for fixed wireless access services in the U.S.

The PIH1-10 platform integrates monolithic PIN diodes with a 100 GHz ft PHEMT process, enabling power amplifier, low noise amplifier and switching to be integrated on a single MMIC. The process also supports linear Schottky diodes, for mixers and detectors, and enhancement and depletion transistors, for logic and bias control. The PIN diodes handle power switching through 50 GHz.

With RF isolated through-wafer vias and humidity resistance, the PIH1-10 platform provides chip-scale packaging, enabling MMICs to be surface-mounted to a printed circuit board without additional packaging.

David Danzilio, senior vice president of WIN Semiconductors, said,

Compound semiconductors, and particularly GaAs, remain the technology of choice for demanding amplifier functions from 500 MHz through 100 GHz and above. This advantage comes from higher gain, linearity and power-added efficiency provided by GaAs devices as compared to RF CMOS or SiGe.

This performance advantage will be critical in the 28 to 40 GHz bands envisioned for 5G, where gain and efficiency at 6 to 10 dB back-off will determine system-level performance. WIN’s GaAs pseudomorphic HEMT is the foundation for many of today’s high performance amplifiers operating in the 20 GHz to 100 GHz range.”

Founded in 1999, WIN Semiconductors is the largest, pure-play, compound semiconductor foundry. WIN has ISO9001/14001 certified, 150 mm GaAs wafer fabs in Taoyuan City, Taiwan, where WIN is headquartered. This multi-site manufacturing facility employs more than 2200.