Reflecting the seasonal ramp of smartphone production, WIN Semiconductors reported record revenue of NT$4,404 million (approximately $146 million) in fiscal Q3 (ending September 30), a gain of 15 percent compared to the prior quarter and 24 percent compared to the same quarter one year ago. EPS was NT$2.93, compared to NT$1.85 in Q2.
WIN Semiconductors has released an improved version of its 0.25 µm, 28 V GaN on SiC process, with 2 dB higher stable gain, increased power-added efficiency and fast switching time for discrete transistor and MMIC applications through 12 GHz.
WIN Semiconductors has released a new chip-scale GaAs process platform that integrates all the circuit functions needed for a millimeter wave front-end module. The process is targeting 5G transceivers operating in the 28 to 40 GHz range.
WIN Semiconductors has developed a GaAs PIN diode MMIC process for high frequency switch and limiter applications. The 3 µm i-layer PIN diodes have near constant junction capacitance through 50 GHz, low insertion loss and excellent isolation for high frequency switch applications.
WIN Semiconductors’ net revenue during the first two months of 2017 was NT$2,089 million (approximately $68 million), which was down 3.9 percent below the same period in 2016. WIN's previous guidance was for Q1 revenue to be flat with Q4 and gross margin better than the 30 percent achieved in Q4.
WIN Semiconductors reported a soft December quarter (Q4), reflecting the seasonality of the mobile phone market. However, revenue for the full year grew 13 percent. Q4 margins declined from a drop in capacity utilization and a decline in the value of gold inventory, reflecting the drop in gold prices.
WIN Semiconductors dropped its fiscal Q3 revenue outlook to a low single-digit decline from Q2, compared to the previous outlook of a single-digit increase. August revenue was NT$ 1.2 billion ($38 million), a 24 percent increase from the prior year and down 1.7 percent from the prior quarter.