WIN Semiconductors has developed a PIN diode MMIC process for high frequency switch and limiter applications where GaAs PIN diodes provide performance advantages. The PIN3-00 process can be used for receive path limiters in radar T/R modules, power switching and high frequency switches.

The PIN process uses low dielectric constant crossovers and three interconnect metal layers with up to 7 µm thick Au metallization for high Q-factor passive elements. Standard through-wafer vias enable flexible ground connections, and optional RF “hot vias” support placement of RF ports on the backside of the MMIC.

The 3 µm i-layer PIN diodes have several performance advantages, including near constant junction capacitance through 50 GHz, low insertion loss and excellent isolation for high frequency switch applications. The PIN diodes are robust to humidity, ensuring high reliability.

WIN, the largest pure-play compound semiconductor foundry, is the first foundry to offer high performance PINs on 150 mm wafers, which ensures the manufacturing scale for high volume markets.