Infineon Technologies AG and Panasonic Corp. have announced an agreement under which both companies will jointly develop Gallium nitride (GaN) devices based on Panasonic’s normally-off (enhancement mode) GaN on silicon transistor structure integrated into Infineon’s surface-mounted device (SMD) packages. In this context Panasonic has provided Infineon with a license of its normally-off GaN transistor structure. This agreement will enable each company to manufacture high performing GaN devices. Customers will have the added advantage of having two possible sources for compatible packaged GaN power switches: a setup not available for any other GaN on silicon device so far.
Infineon Technologies AG, a leading provider of hardware-based security for cellular M2M communications, announced its new SLM 97 and SLI 97 security controller families. The new products stand out with unique features required for M2M communication in industrial as well as automotive applications such as emergency call (eCall) and vehicle-to-vehicle (V2V) communication.
Infineon Technologies, together with the German automotive supplier, Hella, has developed innovative radio frequency components for a radar sensor, which reliably monitors the blind spot in the car’s rear section.
Infineon Technologies has introduced the PTVA127002EV 700 W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700 W) available for radar systems operating in the 1200-1400 MHz frequency range.