RFIC Channel

New Thin GaN Structure on SiC Improves RF Performance

SweGaN is a spin-off from Linköping University that recently announced a new GaN-on-SiC HEMT heterostructure, QuanFINE ™, built on the concept of a GaN−SiC hybrid material that combines the high-electron-velocity thin GaN with the high-breakdown bulk SiC. According to their web site, the structure is realized by the company’s unique hot-wall MOCVD process and shown good result in both high-frequency and power transistors. 


Read More

Demand for SiC and GaN Propels Wolfspeed’s Growth

Reflecting strong demand for SiC and GaN, Wolfspeed’s fourth fiscal quarter (Q4) revenue grew 34 percent sequentially and 81 percent year-over-year (Y/Y) to $110 million. For the full fiscal year, Wolfspeed’s revenue was $329 million, 49 percent above the revenue achieved in fiscal 2017.


Read More