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Articles Tagged with ''hemts''

Richardson RFPD introduces 48 V GaN-on-Si RF power transistors from Nitronex

RFIC
November 20, 2013

Richardson RFPD Inc. announces that it is taking advance orders and offering full design support capabilities for a new family of 48 V gallium nitride-on-silicon (GaN-on-Si) RF power transistors from Nitronex.


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Cree releases two new GaN HEMTs for L-Band radar systems

RFIC
August 22, 2013

Cree has released two GaN HEMTs ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500.  Tthe new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz. 


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SEDU to demo GaN HEMTs for S- and X-Band radar Applications at IMS 2012

June 15, 2012

Sumitomo Electric Device Innovations USA Inc. (SEDU) will be showing its full line of GaN HEMTs at this year’s MTT-S IMS 2012 Show in Montreal. 


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