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Articles Tagged with ''hemts''

Richardson RFPD introduces five new GaN on SiC HEMT RF transistors from MACOM

April 23, 2014

Richardson RFPD Inc. announces immediate availability and full design support capabilities for five new gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistors (HEMTs) RF transistors from M/A-COM Technology Solutions (MACOM).

 


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Richardson RFPD introduces 48 V GaN-on-Si RF power transistors from Nitronex

RFIC
November 20, 2013

Richardson RFPD Inc. announces that it is taking advance orders and offering full design support capabilities for a new family of 48 V gallium nitride-on-silicon (GaN-on-Si) RF power transistors from Nitronex.


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Cree releases two new GaN HEMTs for L-Band radar systems

RFIC
August 22, 2013

Cree has released two GaN HEMTs ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500.  Tthe new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz. 


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SEDU to demo GaN HEMTs for S- and X-Band radar Applications at IMS 2012

June 15, 2012

Sumitomo Electric Device Innovations USA Inc. (SEDU) will be showing its full line of GaN HEMTs at this year’s MTT-S IMS 2012 Show in Montreal. 


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