- Buyers Guide
Articles Tagged with ''cree''
Cree has added four new gallium nitride (GaN) high electron mobility transistors (HEMTs) to its product portfolio at Digi-Key, the sole distributor for Cree RF components. Respectively based on Cree’s high power density 50V, 0.25μm and 0.4μm GaN on silicon carbide (SiC) foundry processes, the new X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities.
Plextek RF Integrationhas been selected by Cree as a preferred design resource to provide third party design services to Cree’s European foundry customers.
Richardson RFPD Inc. announces the availability of the industry's first 1Ω, 1700V Silicon Carbide (SiC) metal oxide semiconductor (MOSFET) from Cree Inc. (Cree).
Cree Inc. announces that Shinry Technologies, a premier high-tech enterprise focused on energy efficient applications in transportation and lighting, employed Cree’s 1200V C2M family of SiC MOSFETs in its new, high-efficiency, hybrid electric and electric vehicle (HEV/EV) power converters to achieve industry-leading 96 percent efficiency. According to Shinry Technologies, Cree’s C2M SiC MOSFETS also enabled a 25 percent reduction in product size and reduced peak power losses by over 60 percent compared to the traditional silicon versions.
AWR Corp., the innovation leader in high-frequency EDA software, announces that a full slate of activities will be offering during EuMW 2013. Select software demonstrations to MicroApps to an EU User Group Meeting as well as a PA design lunch and learn with Cree and a Customer Appreciation happy hour with National Instruments are all in the works.
Cree has released two GaN HEMTs ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500. Tthe new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz.
Cree’s GaN RF technology played a critical behind-the-scenes role in the upcoming action film, “Escape Plan,” starring Sylvester Stallone and Arnold Schwarzenegger. The film features aerial stunt sequences captured using a low-latency HD camera and transmitter and Array Wireless’ S-Band linear power amplifier, which employs Cree’s world-class GaN HEMT semiconductors to meet the stringent linearity requirements for wide bandwidth HD digital transmission.
Array Wireless Inc., a technology leader in the creation of efficient, high linearity microwave power amplifiers, announced that its enabling amplifier technology was successfully used to support the filming of aerial stunt sequences for the upcoming movie “Escape Plan,” starring Sylvester Stallone and Arnold Schwarzenegger.
Richardson RFPD Inc. announces the availability of the new Silicon Carbide (SiC) six-pack (three phase) power module from Cree Inc. (Cree).
Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth. As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.