advertisment Advertisement
This ad will close in  seconds. Skip now
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement

Articles Tagged with ''cree''

Cree extends partnership with APC Novacom

Cree Inc.
No Comments

Cree, Inc. is enhancing its support of the European market by extending its partnership with APC Novacom.


Read More

Cree RF to exhibit & present at IMS & WAMICON 2014

Cree RF
No Comments

Cree RF, the global leader in GaN technology for telecom, is exhibiting and engaging in several technical and educational events at this year’s IEEE MTT International Microwave Symposium (IMS), which will take place June 1-6, 2014 in Tampa, Fla.


Read More

Cree introduces highest power and frequency plastic packaged GaN transistors

Cree Inc.
No Comments

Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.


Read More

Cree announces low cost extended bandwidth GaN HEMT transistors

Cree Inc.
No Comments

As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas. In response to broader bandwidth demand, Cree, Inc. introduces a family of GaN HEMT RF transistors that delivers industry-leading bandwidth and high efficiency performance to support today’s busy LTE networks.


Read More

Cree adds four new GaN HEMTs for radar to Digi-Key portfolio

Cree Inc.
No Comments

Cree has added four new gallium nitride (GaN) high electron mobility transistors (HEMTs) to its product portfolio at Digi-Key, the sole distributor for Cree RF components. Respectively based on Cree’s high power density 50V, 0.25μm and 0.4μm GaN on silicon carbide (SiC) foundry processes, the new X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities.


Read More

Cree selects Plextek RF Integration as preferred European design resource

Cree and Plextek RF Integration
No Comments

Plextek RF Integrationhas been selected by Cree as a preferred design resource to provide third party design services to Cree’s European foundry customers.


Read More

Richardson RFPD introduces industry's first 1700V SiC MOSFET from Cree

Richardson RFPD Inc.
No Comments

Richardson RFPD Inc. announces the availability of the industry's first 1Ω, 1700V Silicon Carbide (SiC) metal oxide semiconductor (MOSFET) from Cree Inc. (Cree).


Read More

Cree SiC MOSFETs revolutionize HEV/EV power converters

Cree Inc., Research Triangle Park, NC
No Comments

Cree Inc. announces that Shinry Technologies, a premier high-tech enterprise focused on energy efficient applications in transportation and lighting, employed Cree’s 1200V C2M family of SiC MOSFETs in its new, high-efficiency, hybrid electric and electric vehicle (HEV/EV) power converters to achieve industry-leading 96 percent efficiency.  According to Shinry Technologies, Cree’s C2M SiC MOSFETS also enabled a 25 percent reduction in product size and reduced peak power losses by over 60 percent compared to the traditional silicon versions.


Read More

AWR announces a full slate of activities for EuMW 2013

Software/EDA
AWR Corp.
No Comments

AWR Corp., the innovation leader in high-frequency EDA software, announces that a full slate of activities will be offering during EuMW 2013. Select software demonstrations to MicroApps to an EU User Group Meeting as well as a PA design lunch and learn with Cree and a Customer Appreciation happy hour with National Instruments are all in the works. 


Read More

Cree releases two new GaN HEMTs for L-Band radar systems

RFIC
Cree Inc., Research Triangle Park, NC
No Comments

Cree has released two GaN HEMTs ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500.  Tthe new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz. 


Read More

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement