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Articles Tagged with ''cree''
Cree RF, the global leader in GaN technology for telecom, is exhibiting and engaging in several technical and educational events at this year’s IEEE MTT International Microwave Symposium (IMS), which will take place June 1-6, 2014 in Tampa, Fla.
Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.
As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas. In response to broader bandwidth demand, Cree, Inc. introduces a family of GaN HEMT RF transistors that delivers industry-leading bandwidth and high efficiency performance to support today’s busy LTE networks.
Cree has added four new gallium nitride (GaN) high electron mobility transistors (HEMTs) to its product portfolio at Digi-Key, the sole distributor for Cree RF components. Respectively based on Cree’s high power density 50V, 0.25μm and 0.4μm GaN on silicon carbide (SiC) foundry processes, the new X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities.
Plextek RF Integrationhas been selected by Cree as a preferred design resource to provide third party design services to Cree’s European foundry customers.
Richardson RFPD Inc. announces the availability of the industry's first 1Ω, 1700V Silicon Carbide (SiC) metal oxide semiconductor (MOSFET) from Cree Inc. (Cree).
Cree Inc. announces that Shinry Technologies, a premier high-tech enterprise focused on energy efficient applications in transportation and lighting, employed Cree’s 1200V C2M family of SiC MOSFETs in its new, high-efficiency, hybrid electric and electric vehicle (HEV/EV) power converters to achieve industry-leading 96 percent efficiency. According to Shinry Technologies, Cree’s C2M SiC MOSFETS also enabled a 25 percent reduction in product size and reduced peak power losses by over 60 percent compared to the traditional silicon versions.
AWR Corp., the innovation leader in high-frequency EDA software, announces that a full slate of activities will be offering during EuMW 2013. Select software demonstrations to MicroApps to an EU User Group Meeting as well as a PA design lunch and learn with Cree and a Customer Appreciation happy hour with National Instruments are all in the works.
Cree has released two GaN HEMTs ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500. Tthe new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz.
Cree’s GaN RF technology played a critical behind-the-scenes role in the upcoming action film, “Escape Plan,” starring Sylvester Stallone and Arnold Schwarzenegger. The film features aerial stunt sequences captured using a low-latency HD camera and transmitter and Array Wireless’ S-Band linear power amplifier, which employs Cree’s world-class GaN HEMT semiconductors to meet the stringent linearity requirements for wide bandwidth HD digital transmission.