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Articles Tagged with ''cree''

Cree adds four new GaN HEMTs for radar to Digi-Key portfolio

April 8, 2014

Cree has added four new gallium nitride (GaN) high electron mobility transistors (HEMTs) to its product portfolio at Digi-Key, the sole distributor for Cree RF components. Respectively based on Cree’s high power density 50V, 0.25μm and 0.4μm GaN on silicon carbide (SiC) foundry processes, the new X-Band and S-Band components exhibit high efficiency, high power gain, and wide bandwidth capabilities.

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Cree selects Plextek RF Integration as preferred European design resource

March 6, 2014

Plextek RF Integrationhas been selected by Cree as a preferred design resource to provide third party design services to Cree’s European foundry customers.

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Richardson RFPD introduces industry's first 1700V SiC MOSFET from Cree

November 4, 2013

Richardson RFPD Inc. announces the availability of the industry's first 1Ω, 1700V Silicon Carbide (SiC) metal oxide semiconductor (MOSFET) from Cree Inc. (Cree).

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Cree SiC MOSFETs revolutionize HEV/EV power converters

November 1, 2013

Cree Inc. announces that Shinry Technologies, a premier high-tech enterprise focused on energy efficient applications in transportation and lighting, employed Cree’s 1200V C2M family of SiC MOSFETs in its new, high-efficiency, hybrid electric and electric vehicle (HEV/EV) power converters to achieve industry-leading 96 percent efficiency.  According to Shinry Technologies, Cree’s C2M SiC MOSFETS also enabled a 25 percent reduction in product size and reduced peak power losses by over 60 percent compared to the traditional silicon versions.

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AWR announces a full slate of activities for EuMW 2013

September 27, 2013

AWR Corp., the innovation leader in high-frequency EDA software, announces that a full slate of activities will be offering during EuMW 2013. Select software demonstrations to MicroApps to an EU User Group Meeting as well as a PA design lunch and learn with Cree and a Customer Appreciation happy hour with National Instruments are all in the works. 

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Cree releases two new GaN HEMTs for L-Band radar systems

August 22, 2013

Cree has released two GaN HEMTs ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500.  Tthe new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz. 

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Cree RF technology helps capture Hollywood aerial action sequence

August 21, 2013

Cree’s GaN RF technology played a critical behind-the-scenes role in the upcoming action film, “Escape Plan,” starring Sylvester Stallone and Arnold Schwarzenegger. The film features aerial stunt sequences captured using a low-latency HD camera and transmitter and Array Wireless’ S-Band linear power amplifier, which employs Cree’s world-class GaN HEMT semiconductors to meet the stringent linearity requirements for wide bandwidth HD digital transmission. 

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Array Wireless products enable aerial stunt filming for Hollywood movie

August 20, 2013

Array Wireless Inc., a technology leader in the creation of efficient, high linearity microwave power amplifiers, announced that its enabling amplifier technology was successfully used to support the filming of aerial stunt sequences for the upcoming movie “Escape Plan,” starring Sylvester Stallone and Arnold Schwarzenegger. 

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Richardson RFPD offers new SiC six-pack power module from Cree

June 12, 2013

Richardson RFPD Inc. announces the availability of the new Silicon Carbide (SiC) six-pack (three phase) power module from Cree Inc. (Cree).

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Cree ships over 2 M GaN HEMT devices for telecom infrastructure

June 3, 2013

Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth.  As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.

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