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ARTICLES

Cree releases two new 50 V broadband GaN HEMTs

July 25, 2014

 Cree has released two new unmatched 50 V gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in high power broadband amplifier, CW, and pulsed applications.  


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Cree selects Plextek RF Integration as preferred European design resource

March 6, 2014

Plextek RF Integrationhas been selected by Cree as a preferred design resource to provide third party design services to Cree’s European foundry customers.


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Cree announces CFO transition

May 22, 2012

Cree Inc. announced that John Kurtzweil has resigned as executive vice president-finance and chief financial officer, effective May 21, 2012, to pursue other opportunities, and that Michael McDevitt has been appointed CFO on an interim basis. Cree has commissioned a search for a replacement through Russell Reynolds Associates, executive search consultants.


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Cree Plans Demonstrations Of GaN Device Technology

May 26, 2011
Cree (Booth 1925) will be demonstrating its GaN-on-SiC MMICs and HEMTs at IMS 2011 in Baltimore. In addition to learning the latest advances in GaN device technology, Cree invites visitors play some ping pong in its booth. Cree will be highlighting one of its newest products, CMPA5585025F. This is...
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Cree Launches Commercial SiC Power MOSFET

January 24, 2011
Cree Inc. , a leader in silicon carbide (SiC) power devices, has introduced a fully-qualified commercial silicon carbide power MOSFET. This establishes a new benchmark for energy efficient power switches and can enable design engineers to develop high voltage circuits with extremely fast switching speeds and ultralow switching losses....
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Cree Acquires SiC and Power Patent Portfolio from Daimler AG

December 3, 2009
Cree Inc. announced that it has acquired a portfolio of patents and patent applications related to semi-insulating silicon carbide (SiC) material and power device technology from Daimler AG. The portfolio consists of approximately 20 patent families, including issued patents in the United States, Germany, Japan and China. US Patent...
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