Cree RF, the global leader in GaN technology for telecom, is exhibiting and engaging in several technical and educational events at this year’s IEEE MTT International Microwave Symposium (IMS), which will take place June 1-6, 2014 in Tampa, Fla. Exhibiting at booth #433, Cree personnel, including John Palmour, co-founder of Cree and CTO for the Power and RF business units, will discuss and demonstrate the latest GaN on SiC technologies: a host of new GaN HEMT devices built on cost effective, plastic DFN (dual-flat no-leads) surface mount and plastic overmold packages, all of which deliver the high power, high efficiency, and wide bandwidth performance Cree is known for at much lower prices than were previously attainable.
Cree’s new cost effective, plastic packaged GaN HEMT products include: a family of GaN HEMT RF transistors that delivers industry-leading bandwidth and high efficiency performance specifically designed to support today’s data-hungry LTE networks; the highest power continuous wave GaN HEMT RF transistors aimed at replacing inefficient GaAs IMFETs and high maintenance tube-based technologies in the cost-sensitive, sub-100W commercial radar and data link amplifier market segments (S-, C-, and X-Band); and industry-leading high power overmold plastic GaN HEMT transistors optimized for telecom applications.
In addition to its exposition, Cree is also participating in the IMS 2014 STEM Program, which will introduce a group of approximately 50 students to microwave electronics technology and careers and facilitate quality educational interactions between participating students and attending engineers, scientists, and technical speakers. Cree personnel will also participate in several areas of the IMS 2014 technical program, including:
Wednesday's IMS Interactive Forum: June 4th, 1:30-4:00pm
Chair: Simon Wood, RF product development manager, Cree
Thursday’s IMS Interactive Forum: June 5th, 1:30-4:00pm
Co-Chair: Simon Wood, RF product development manager, Cree
The Rudolph Henning Distinguished Mentoring Award Ceremony: Thursday, June 5th, 2:20-2:30pm
Presenter: Ray Pengelly, strategic business development manager, Cree
The 15th annual IEEE Wireless and Microwave Technology Conference (WAMICON): Friday, June 6th
Conference Chair: Ray Pengelly, strategic business development manager, Cree
WAMICON Power Amplifiers - 2 Oral Session: Friday, June 6th, 10:45am-1:30pm
“A Waveform Engineered Power Amplifier Design for Envelope Tracking” by Z. Wang, Nokia, Inc., Beijing, China, and Ray Pengelly, strategic business development manager, Cree
For more information about Cree’s cutting-edge GaN on SiC technology, please visit www.cree.com/RF. To stay up-to-date on the latest Cree IMS 2014 announcements and activities, please follow Cree RF on Twitter, LinkedIn, and YouTube and IMS 2014 on Twitter and Facebook.