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ARTICLES

Cree acquires APEI

Cree Inc., a market leader in silicon-carbide (SiC) power and RF products announced the acquisition of APEI, a global leader in power modules and power electronics applications. Combining two highly complementary innovators, the acquisition enables Cree’s Power and RF business to extend its leadership position and help to accelerate the market for high-performance, best-in-class SiC power modules.


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Cree introduces highest power C-Band GaN HEMTs

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the industry’s first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200 W continuous wave (CW) and 4.4 to 5.0 GHz operation.


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Cree earns U.S. Dept. of Defense MRL 8 designation

Cree, Inc., a leader in gallium nitride (GaN) RF devices, has earned the U.S. Department of Defense (DoD) manufacturing readiness level eight (MRL 8) designation. Awarded for its production of GaN monolithic microwave integrated circuits (MMICs), this designation verifies Cree’s ability to provide assured, affordable and commercially viable production capabilities and capacities for items essential to national defense.  


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