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ARTICLES

C-Band GaN HEMT Delivers 200 W CW

Cree extends family of 50 V discrete GaN HEMT die

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50 V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components.


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Cree introduces highest power C-Band GaN HEMTs

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the industry’s first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200 W continuous wave (CW) and 4.4 to 5.0 GHz operation.


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Cree earns U.S. Dept. of Defense MRL 8 designation

Cree, Inc., a leader in gallium nitride (GaN) RF devices, has earned the U.S. Department of Defense (DoD) manufacturing readiness level eight (MRL 8) designation. Awarded for its production of GaN monolithic microwave integrated circuits (MMICs), this designation verifies Cree’s ability to provide assured, affordable and commercially viable production capabilities and capacities for items essential to national defense.  


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Cree, Inc. to present at RF/Microwave PA Forum at EuMW

 Dr. Christopher Harris, European business development manager at Cree, Inc., will present “Using Cree® GaN Large Signal Models in Microwave Office Simulation Tools” at the RF/Microwave PA Forum at European Microwave Week.  


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Cree introduces first from a new family of 50 V GaN HEMT Die

 Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has developed a family of 50 V discrete GaN high electron mobility transistor (HEMT) die for operation up to 6 GHz.  


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Cree extends partnership with APC Novacom

Cree, Inc. is enhancing its support of the European market by extending its partnership with APC Novacom.


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New Cree GaN HEMT die available via distribution

 Cree, Inc. has made seven new GaN HEMT die available through distribution via Mouser. Manufactured on silicon carbide (SiC) substrates using a either 0.4 or 0.25 μm gate length fabrication process, the gallium nitride (GaN) high electron mobility transistor (HEMT) die exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency. 


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Cree introduces highest power and frequency plastic packaged GaN transistors

Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.


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Cree announces low cost extended bandwidth GaN HEMT transistors

As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas. In response to broader bandwidth demand, Cree, Inc. introduces a family of GaN HEMT RF transistors that delivers industry-leading bandwidth and high efficiency performance to support today’s busy LTE networks.


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