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Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet the requirements of the U.S. aerospace and defense (A&D) market.
The company plans to support a broad range of A&D applications with entirely new gallium nitride (GaN) RF power transistor products, as well as its proven portfolio of more than 400 LDMOS RF power transistor and gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) products. These Freescale products will be supported by a dedicated team of professionals focused exclusively on A&D markets and customers.
“Freescale has more than 60 years of RF power innovation and experience, and we look forward to extending our focus beyond our leading position in RF power transistors to growing A&D markets,” said Ritu Favre, senior vice president and general manager of Freescale’s RF business. “A&D equipment manufacturers will benefit from Freescale’s long track record of working closely with customers to create cost-effective solutions that combine superb performance, proven reliability and extreme ruggedness.”
According to analyst firm ABI Research, global sales for RF power devices targeting the defense market (under 4 GHz and above 4 W output) will total $144 million (USD) by 2018.
“Freescale has been the market leader in RF power devices for wireless infrastructure for many years,” said Lance Wilson, research director, RF Devices at ABI Research. “That experience and expertise should serve them well as they branch out into other RF power market segments, including A&D.”
Freescale’s RF business (formerly part of Motorola’s Semiconductor Products Sector) has more than six decades of history and expertise in RF power transistor development, introducing its first device in 1952. Since then it has become the global leader in LDMOS RF power transistors for wireless infrastructure, with more than 30 million delivered every year. Freescale maintains the RF power market’s only U.S.-based LDMOS device fabrication facility, as well as in-house final manufacturing facilities.
The company’s Airfast™ LDMOS devices deliver high linearity, broad instantaneous bandwidth and advanced plastic packaging. Freescale’s LDMOS products that have been “ruggedized” for commercial applications are ideally suited to A&D requirements, with the ability to operate into extreme load mismatches (VSWR) greater than 65:1 and enhanced protection from electrostatic discharge (ESD). The company’s LDMOS devices span frequency ranges to more than 3 GHz with RF power outputs to 1250 W. Freescale’s GaAs MMIC devices cover applications to over 5 GHz and include gain block amplifiers, power amplifiers (up to 4 W), and low-noise amplifiers with noise figures as low as 0.35 dB. Freescale’s first GaN RF power transistors are planned for availability in late 2013.
This exceptional experience and world-class technology will be complemented by a team of RF experts dedicated to the A&D market, including technical and applications support. The Freescale RF A&D team is led by a senior member of Freescale’s technical staff, with more than 30 years of RF power transistor experience, from design engineering to executive management. He is joined by a former marketing director for Freescale’s RF power business, who possesses 40 years of experience in marketing, sales and distribution. The Freescale products will additionally be supported by a dedicated team of marketing, program management, applications, regulatory compliance and other professionals focused exclusively on A&D markets and customers.
New products purchased for use in A&D applications are planned for inclusion in the Freescale Longevity Program, with assured supply for 15 years. For Terms and Conditions, and to obtain a list of available products please see: www.Freescale.com/productlongevity.
For more information about Freescale’s A&D-capable products, please visit www.freescale.com/rfmilitary.
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