- Buyers Guide
Nujira Ltd., the world’s leader in Envelope Tracking (ET) technology, will be presenting new performance results at the IEEE MTT International Microwave Symposium (IMS) this week demonstrating that the company has bettered its own world record linearity mark for an RF Power Amplifier (PA) operating under ET conditions.
API Technologies Corp., a trusted provider of RF/microwave, microelectronics, and security solutions for critical and high-reliability applications, announced that it will showcase a wide range of RF, microwave, and millimeter wave products at Booth #744 during the 2013 IEEE International Microwave Symposium (IMS2013). The IMS 2013 Exhibition takes place June 4-6 at the Washington State Convention Center in Seattle.
International Manufacturing Services Inc. (IMS), a leading manufacturer and supplier of high quality thick film chip resistors, terminations, attenuators and other RF components to the electronics industry, announces the availability of its compact Thick Film 7GHz SMT Wilkinson Power Divider.
NXP Semiconductors N.V. announced the availability of its ultra-wideband Doherty reference design using the BLF884P and BLF884PS – the industry’s first wideband Doherty power amplifiers capable of broadband operation (470 to 806 MHz). The new 70W DVB-T LDMOS designs bring the high-efficiency gains of Doherty topologies to broadcast transmitters, using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum.
M/A-COM Technology Solutions Inc. (MACOM), a leading supplier of high performance analog semiconductor solutions, introduced its series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems. Scaling to peak pulse power levels of 100W – the highest among competing components in this product category – MACOM’s GaN in Plastic transistors defy the power, size and weight limitations of competing ceramic-packaged offerings to enable a new generation of high performance, ultra compact military and civilian radar systems.
Teseq has expanded its broadband amplifier line to include a Class A linear and low distortion model that operates from 10 kHz to 400 MHz with a rated power level of 260 W.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a family of new directional power detectors from M/A-COM Technology Solutions Inc. (M/A-COM), featuring integrated low loss directional couplers and built-in temperature compensation circuits.
CTS Electronic Components Inc. announces development of Model 144, an oven controlled crystal oscillators (OCXOs), which uses the unique internal heated resonator (IHR) technologies to significantly reduce power consumption while maintaining excellent performance.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 200 W solid state, broadband, high power pallet amplifier featuring Freescale Semiconductor Inc. (Freescale) enhanced rugged LDMOS devices.
The emerging market for Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives.
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