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Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet the requirements of the U.S. aerospace and defense (A&D) market.
NXP Semiconductors has launched its new Gen8+ LDMOS RF power transistors – an expansion of its eighth-generation LDMOS product line for wireless base stations with a strong focus on TD-LTE.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 200 W solid state, broadband, high power pallet amplifier featuring Freescale Semiconductor Inc. (Freescale) enhanced rugged LDMOS devices.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new laterally diffused metal oxide semiconductor (LDMOS) transistor targeting land mobile radio from Freescale Semiconductor Inc.
Richardson RFPD Inc. announces immediate availability and full design support capabilities for new package options on an RF power LDMOS transistor from Freescale Semiconductor Inc. (Freescale).
Building on its leadership position in the digital broadcast market, NXP Semiconductors N.V. announced that it has developed the industry’s first ultra wideband solution for Doherty architectures. This patent-pending solution will uniquely enable manufacturers of digital transmitters to enjoy the high-efficiency gains that Doherty power amplifiers confer with greatly expanded bandwidth.
Introduction to a commercially available 48 V LDMOS transistor, developed for low cost, high power cellular applications
Explores different market opportunities for GaN and provides expert industry perspectives from leading GaN suppliers
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