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Following the success of the Diamond RF Resistives® product range, EMC Technology now offers CVD Diamond Heat Spreaders designed to meet today’s demanding requirements for higher power and longer life spans by keeping junction temperatures low and stable. CVD Diamond provides up to 8x the thermal conductivity of traditional materials like AlN and BeO.
SemiGen Inc. (www.semigen.net), an ISO and ITAR registered RF/Microwave assembly, automated PCB manufacturing, and RF Supply Center, has announced that a series of microwave chip capacitors are now available from their RF Supply Center.
Skyworks Solutions Inc., an innovator of high performance analog semiconductors enabling a broad range of end markets, unveiled a portfolio of low noise amplifiers (LNAs) that provide best-in-class noise figure, a critical component to boosting weak incoming signals for today’s 4G wireless infrastructure as well as diverse broad market systems including GPS, broadband, military and satellite communications.
NXP Semiconductors N.V. announced the availability of a new family of extreme-broadband amplifiers, applicable for CATV, broadcast TV, satellite systems and general ISM applications – the BGA3012, BGA3015 and BGA3018. Delivering outstanding performance on key parameters including high P1dB and OIP3, very low noise figures, 5 and 8V supply voltage operation and a superior ESD rating, these amplifiers are suitable for applications that require robustness and outstanding gain, noise and linearity performance, providing end users with improved reception quality and higher bandwidth.
Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet the requirements of the U.S. aerospace and defense (A&D) market.
At the 2013 IMS show in Seattle, Nuvotronics unveils its high performance, compact, board level filter and diplexer lineup. With high Q, Nuvotronics’ filters feature 1 to 2 dB lower loss than traditional technology components, while offering tuning-free precision manufacturing.
Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth. As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.
Custom MMIC, (www.CustomMMIC.com), a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the debut of several new GaAs MMIC amplifiers and mixers in booth #1807 at the International Microwave Symposium in Seattle, WA June 4-6th.
Analog Devices Inc. (ADI) introduced four new RF amplifier gain blocks which ease the design of high dynamic range communications, defense and instrumentation systems.
TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes. These products offer performance, size and durability advantages for communications, radar and defense RF systems. TriQuint innovation will be displayed at the IEEE IMS / MTT-S convention and exhibition in Seattle, Washington, June 4-6, Booth 530.
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